 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
DCR806SG28 Datasheet(PDF) 4 Page - Dynex Semiconductor |
|
||||||||||||||||||||||||||||||
DCR806SG28 Datasheet(HTML) 4 Page - Dynex Semiconductor |
|
|
4 / 10 page  SEMICONDUCTOR DCR470G85 4/10 www.dynexsemi.com GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V VGD Gate non-trigger voltage At VDRM, Tcase = 125°C TBD V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 250 mA IGD Gate non-trigger current VDRM = 5V, Tcase = 25°C TBD mA CURVES 0 400 800 1200 1600 1.0 2.0 3.0 4.0 5.0 Instantaneous on-state voltage VT - (V) 25°C min 25°C max 125°C min 125°C max Fig.2 Maximum & minimum on-state characteristics VTM EQUATION Where A = 1.545561 B = -0.202735 VTM = A + Bln (IT) + C.IT+D. IT C = 0.001865 D = 0.066158 these values are valid for Tj = 125°C for IT 50A to 1600A |
Similar Part No. - DCR806SG28 |
|
Similar Description - DCR806SG28 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
