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SI4618DY Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI4618DY
Description  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI4618DY Datasheet(HTML) 2 Page - Vishay Siliconix

 
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Document Number: 74450
S-70193-Rev. A, 29-Jan-07
Vishay Siliconix
Si4618DY
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typa
Max
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 1 mA
Ch-1
30
V
VGS = 0 V, ID = 1 mA
Ch-2
30
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
Ch-1
35
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
ID = 250 µA
Ch-1
- 6
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 1 mA
Ch-1
1
2.5
VDS = VGS, ID = 1 mA
Ch-2
1
2.5
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 16 V
Ch-1
100
µA
VDS = 0 V, VGS = ± 16 V
Ch-2
100
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
Ch-1
0.001
mA
VDS = 30 V, VGS = 0 V
Ch-2
0.05
0.5
VDS = 30 V, VGS = 0 V, TJ = 100 °C
Ch-1
0.025
VDS = 30 V, VGS = 0 V, TJ = 100 °C
Ch-2
3
15
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
Ch-1
20
A
VDS = 5 V, VGS = 10 V
Ch-2
20
Drain-Source On-State Resistanceb
rDS(on)
VGS = 10 V, ID = 8 A
Ch-1
0.014
0.017
Ω
VGS = 10 V, ID = 8 A
Ch-2
0.0083
0.010
VGS = 4.5 V, ID = 5 A
Ch-1
0.016
0.0195
VGS = 4.5 V, ID = 5 A
Ch-2
0.0095 0.0115
Forward Transconductanceb
gfs
VDS = 15 V, ID = 8 A
Ch-1
40
S
VDS = 15 V, ID = 8 A
Ch-2
47
Dynamica
Input Capacitance
Ciss
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Ch-1
1535
pF
Ch-2
2290
Output Capacitance
Coss
Ch-1
205
Ch-2
360
Reverse Transfer Capacitance
Crss
Ch-1
91
Ch-2
117
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 8 A
Ch-1
29
44
nC
VDS = 15 V, VGS = 10 V, ID = 8 A
Ch-2
39
59
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 8 A
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 8 A
Ch-1
12.5
19
Ch-2
17
26
Gate-Source Charge
Qgs
Ch-1
4.1
Ch-2
5.6
Gate-Drain Charge
Qgd
Ch-1
3.4
Ch-2
4
Gate Resistance
Rg
f = 1 MHz
Ch-1
1.8
3.0
Ω
Ch-2
1.9
3.0


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