Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

SI4396DY Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI4396DY
Description  N-Channel 30-V (D-S) MOSFET with Schottky Diode
Download  7 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo 

SI4396DY Datasheet(HTML) 2 Page - Vishay Siliconix

   
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
www.vishay.com
2
Document Number: 74252
S-61223-Rev. A, 17-Jul-06
Vishay Siliconix
Si4396DY
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
30
V
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID= 250 µA
1.2
2.6
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
0.18
1
mA
VDS = 30 V, VGS = 0 V, TJ = 100 °C
22
100
On -State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
20
A
Drain-Source On-State Resistancea
rDS(on)
VGS = 10 V, ID = 10 A
0.0095
0.0115
Ω
VGS = 4.5 V, ID = 8 A
0.0132
0.0160
Forward Transconductancea
gfs
VDS = 15 V, ID = 10 A
40
S
Dynamicb
Input Capacitance
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
1675
pF
Output Capacitance
Coss
410
Reverse Transfer Capacitance
Crss
150
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 10 A
29.6
45
nC
VDS = 15 V, VGS = 4.5 V, ID = 10 A
13.3
20
Gate-Source Charge
Qgs
4.5
Gate-Drain Charge
Qgd
4.3
Gate Resistance
Rg
f = 1 MHz
1.55
2.4
Ω
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 3 Ω
ID ≅ 5 A, VGEN = 4.5 V, RG = 1 Ω
22
33
ns
Rise Time
tr
71
110
Turn-Off Delay Time
td(off)
22
33
Fall Time
tf
714
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 3 Ω
ID ≅ 5 A, VGEN = 10 V, RG = 1 Ω
11
18
Rise Time
tr
29
45
Turn-Off Delay Time
td(off)
24
36
Fall Time
tf
8
15
Drain-Source Body Diode and Schottky Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
5
A
Pulse Diode Forward Currenta
ISM
40
Body Diode Voltage
VSD
IS = 2 A
0.35
0.4
V
Body Diode Reverse Recovery Time
trr
IF = 4 A, di/dt = 100 A/µs, TJ = 25 °C
29
45
ns
Body Diode Reverse Recovery Charge
Qrr
18
27
nC
Reverse Recovery Fall Time
ta
14
ns
Reverse Recovery Rise Time
tb
15


Html Pages

1  2  3  4  5  6  7 


Datasheet Download




Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn