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SI4396DY Datasheet(PDF) 5 Page - Vishay Siliconix

Part No. SI4396DY
Description  N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI4396DY Datasheet(HTML) 5 Page - Vishay Siliconix

   
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Document Number: 74252
S-61223-Rev. A, 17-Jul-06
www.vishay.com
5
Vishay Siliconix
Si4396DY
TYPICAL CHARACTERISTICS
25 °C, unless noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Current Derating*
0
4
8
11
15
TC – Case Temperature (°C)
0
25
50
75
100
125
150
19
Power Derating, Junction-to-Foot
0.0
1.4
2.8
4.2
5.6
7.0
0
25
50
75
100
125
150
TC – Case Temperature (°C)
Power Derating, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
0
25
50
75
100
125
150
TA – Case Temperature (°C)


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