Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

M58WR016QT Datasheet(PDF) 22 Page - Numonyx B.V

Part # M58WR016QT
Description  16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories
Download  110 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

M58WR016QT Datasheet(HTML) 22 Page - Numonyx B.V

Back Button M58WR016QT Datasheet HTML 18Page - Numonyx B.V M58WR016QT Datasheet HTML 19Page - Numonyx B.V M58WR016QT Datasheet HTML 20Page - Numonyx B.V M58WR016QT Datasheet HTML 21Page - Numonyx B.V M58WR016QT Datasheet HTML 22Page - Numonyx B.V M58WR016QT Datasheet HTML 23Page - Numonyx B.V M58WR016QT Datasheet HTML 24Page - Numonyx B.V M58WR016QT Datasheet HTML 25Page - Numonyx B.V M58WR016QT Datasheet HTML 26Page - Numonyx B.V Next Button
Zoom Inzoom in Zoom Outzoom out
 22 / 110 page
background image
Command interface - standard commands
M58WR016QT, M58WR016QB, M58WR032QT,
22/110
5.6
Block Erase command
The Block Erase command can be used to erase a block. It sets all the bits within the
selected block to ’1’. All previous data in the block is lost. If the block is protected then the
Erase operation will abort, the data in the block will not be changed and the Status Register
will output the error. The Block Erase command can be issued at any moment, regardless of
whether the block has been programmed or not.
Two Bus Write cycles are required to issue the command.
The first bus cycle sets up the Erase command.
The second latches the block address in the internal state machine and starts the
Program/Erase Controller.
If the second bus cycle is not Write Erase Confirm (D0h), Status Register bits SR4 and SR5
are set and the command aborts. Erase aborts if Reset turns to VIL. As data integrity cannot
be guaranteed when the Erase operation is aborted, the block must be erased again.
Once the command is issued the device outputs the Status Register data when any address
within the bank is read. At the end of the operation the bank will remain in Read Status
Register mode until a Read Array, Read CFI Query or Read Electronic Signature command
is issued.
During Erase operations the bank containing the block being erased will only accept the
Read Array, Read Status Register, Read Electronic Signature, Read CFI Query and the
Program/Erase Suspend command, all other commands will be ignored. Refer to Dual
Operations section for detailed information about simultaneous operations allowed in banks
not being erased. Typical Erase times are given in Table 15: Program/Erase times and
endurance cycles.
See Appendix C, Figure 24: Block Erase flowchart and pseudo code, for a suggested
flowchart for using the Block Erase command.
5.7
Program command
The memory array can be programmed Word-by-Word. Only one Word in one bank can be
programmed at any one time. If the block is protected, the program operation will abort, the
data in the block will not be changed and the Status Register will output the error.
Two bus write cycles are required to issue the Program Command.
The first bus cycle sets up the Program command.
The second latches the Address and the Data to be written and starts the
Program/Erase Controller.
After programming has started, read operations in the bank being programmed output the
Status Register content.
During Program operations the bank being programmed will only accept the Read Array,
Read Status Register, Read Electronic Signature, Read CFI Query and the Program/Erase
Suspend command. Refer to Dual Operations section for detailed information about
simultaneous operations allowed in banks not being programmed. Typical Program times
are given in Table 15: Program/Erase times and endurance cycles.
Programming aborts if Reset goes to VIL. As data integrity cannot be guaranteed when the
program operation is aborted, the memory location must be reprogrammed.
See Appendix C, Figure 20: Program flowchart and pseudo code, for the flowchart for using
the Program command.


Similar Part No. - M58WR016QT

ManufacturerPart #DatasheetDescription
logo
STMicroelectronics
M58WR016KL STMICROELECTRONICS-M58WR016KL Datasheet
80Kb / 10P
   16- or 32-Mbit (횞16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories
logo
Numonyx B.V
M58WR016KL NUMONYX-M58WR016KL Datasheet
2Mb / 123P
   16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories
logo
STMicroelectronics
M58WR016KL60ZA6E STMICROELECTRONICS-M58WR016KL60ZA6E Datasheet
80Kb / 10P
   16- or 32-Mbit (횞16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories
logo
Numonyx B.V
M58WR016KL60ZA6E NUMONYX-M58WR016KL60ZA6E Datasheet
2Mb / 123P
   16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories
logo
STMicroelectronics
M58WR016KL60ZA6U STMICROELECTRONICS-M58WR016KL60ZA6U Datasheet
80Kb / 10P
   16- or 32-Mbit (횞16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories
More results

Similar Description - M58WR016QT

ManufacturerPart #DatasheetDescription
logo
Numonyx B.V
M58WR064HT NUMONYX-M58WR064HT Datasheet
1Mb / 111P
   64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories
M58WR064HU NUMONYX-M58WR064HU Datasheet
2Mb / 114P
   64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories
logo
STMicroelectronics
M58WR064FT STMICROELECTRONICS-M58WR064FT Datasheet
573Kb / 87P
   64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032ET STMICROELECTRONICS-M58WR032ET Datasheet
558Kb / 81P
   32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT STMICROELECTRONICS-M58WR032FT Datasheet
1Mb / 86P
   32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58PR256J STMICROELECTRONICS-M58PR256J Datasheet
842Kb / 114P
   256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
M36W0R5020T0 STMICROELECTRONICS-M36W0R5020T0 Datasheet
184Kb / 26P
   32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package
M30L0R7000B0 STMICROELECTRONICS-M30L0R7000B0 Datasheet
1Mb / 83P
   128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M58LR128FT STMICROELECTRONICS-M58LR128FT Datasheet
537Kb / 82P
   128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128GT STMICROELECTRONICS-M58LR128GT Datasheet
1Mb / 84P
   128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100  ...More


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com