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M58WR064HU Datasheet(PDF) 1 Page - Numonyx B.V

Part # M58WR064HU
Description  64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

M58WR064HU Datasheet(HTML) 1 Page - Numonyx B.V

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November 2007
Rev 5
1/114
1
M58WR064HU
M58WR064HL
64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst)
1.8V supply Flash memories
Feature summary
Supply voltage
–VDD = 1.7V to 2V for Program, Erase and
Read
–VDDQ = 1.7V to 2V for I/O Buffers
–VPP = 12V for fast Program (9V tolerant)
Multiplexed address/data
Synchronous / asynchronous read
– Synchronous Burst Read mode: 66MHz
– Random Access: 70ns
Synchronous burst read suspend
Programming time
– 8µs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
Memory blocks
– Multiple Bank Memory Array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
Dual operations
– Program Erase in one Bank while Read in
others
– No delay between Read and Write
operations
Block locking
– All blocks locked at Power up
– Any combination of blocks can be locked
–WP for Block Lock-Down
Security
– 128 bit user programmable OTP cells
– 64 bit unique device number
Common Flash Interface (CFI)
100,000 program/erase cycles per block
Electronic signature
– Manufacturer Code: 20h
– Top Device Code,
M58WR064HU: 88C0h
– Bottom Device Code,
M58WR064HL: 88C1h
Package
– ECOPACK®
VFBGA44
7.7 x 9mm (ZB)
7.5 × 5mm (ZA)
FBGA
www.numonyx.com


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