RJK5003DPD datasheet(1/7 Pages) RENESAS

Part #	RJK5003DPD

Description	Silicon N Channel Power MOS FET High Speed Power Switching Use

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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Rev.2.00,

Mar 14, 2006,

page 1 of 6

RJK5003DPD

Silicon N Channel Power MOS FET

High Speed Power Switching Use

REJ03G0580-0200

Rev.2.00

Mar 14, 2006

Features

• V

DSS : 500 V

• R

DS(on) : 1.5

Ω (MAX.)

• I

D : 5 A

• Surface mount package (MP-3A)

Outline

RENESAS Package code: PRSS0004ZA-A

(Package name : MP-3A)

1

1. Gate

2. Drain

3. Source

4. Drain

3

2, 4

2

4

Applications

• Lighting ballast, SMPS, etc.

Maximum Ratings

(Tc = 25°C)

Parameter

Symbol

Ratings

Unit

Conditions

Drain to source voltage

VDSS

500

V

VGS = 0 V

Gate to source voltage

VGSS

±30

V

VDS = 0 V

Drain current

ID

5

A

Drain Peak current

ID (pulse)

Note1

20

A

Avalanche current

IAP

5

A

L = 200

µH

Channel dissipation

Pch

62.5

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Channel to case thermal impedance

θch-c

2.0

°C/W

Channel to case

Note:

1. Pulse width limited by safe operating area.

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