RN2107MFV

∼RN2109MFV

2005-03-30

1

Type No.

R1 (kΩ)R2 (kΩ)

RN2107MFV

10

47

RN2108MFV

22

47

RN2109MFV

47

22

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2107MFV,RN2108MFV,RN2109MFV

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Ultra-small package, suited to very high density mounting

Incorporating a bias resistor into the transistor reduces the number of parts, so

enabling the manufacture of ever more compact equipment and lowering

assembly cost.

A wide range of resistor values is available for use in various circuits.

Complementary to the RN1107MFV~RN1109MFV

Lead (Pb) - free

Equivalent Circuit and Bias Resistor Values

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

RN2107MFV

~RN2109MFV

−50

V

RN2107MFV

−6

RN2108MFV

−7

Emitter-base voltage

RN2109MFV

−15

V

Collector current

−100

mA

Collector power dissipation

150

mW

Junction temperature

150

°C

Storage temperature range

RN2107MFV

~RN2109MFV

−55~150

°C

Note: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)

JEDEC

―

JEITA

―

TOSHIBA

2-1L1A

Weight: 0.0015 g (typ.)

Unit: mm

1. BASE

2. EMITTER

3. COLLECTOR

VESM

1

2

3

0.8±0.05

1.2±0.05

0.5

0.45

0.4

0.4

1.15

0.45

0.4