M29DW323DT70N1E datasheet(16/51 Pages) NUMONYX

Part #	M29DW323DT70N1E

Description	32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory

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Manufacturer	NUMONYX [Numonyx B.V]

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M29DW323DT, M29DW323DB

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Fast Program Commands

There are two Fast Program commands available

to improve the programming throughput, by writing

several adjacent words or bytes in parallel. The

Quadruple Byte Program command is available for

x8 operations, while the Double Word Program

command is available for x16 operations.

Only one bank can be programmed at any one

time. The other bank must be in Read mode or

Erase Suspend.

Fast Program commands should not be attempted

when VPP/WP is not at VPP. Care must be taken

because applying a 12V VPP voltage to the VPP/

WP pin will temporarily unprotect any protected

block.

After programming has started, Bus Read opera-

tions in the Bank being programmed output the

Status Register content, while Bus Read opera-

tions to the other Bank output the contents of the

memory array.

After the program operation has completed the

memory will return to the Read mode, unless an

error has occurred. When an error occurs Bus

Read operations to the Bank where the command

was issued will continue to output the Status Reg-

ister. A Read/Reset command must be issued to

reset the error condition and return to Read mode.

Note that the Fast Program commands cannot

change a bit set at ’0’ back to ’1’. One of the Erase

Commands must be used to set all the bits in a

block or in the whole memory from ’0’ to ’1’.

Typical Program times are given in Table

7., Program, Erase Times and Program, Erase

Endurance Cycles.

Quadruple Byte Program Command. The Qua-

druple Byte Program command is used to write a

page of four adjacent Bytes in parallel. The four

bytes must differ only for addresses A0, DQ15A-1.

Five bus write cycles are necessary to issue the

Quadruple Byte Program command.

■

The first bus cycle sets up the Quadruple Byte

Program Command.

■

The second bus cycle latches the Address and

the Data of the first byte to be written.

■

The third bus cycle latches the Address and

the Data of the second byte to be written.

■

The fourth bus cycle latches the Address and

the Data of the third byte to be written.

■

The fifth bus cycle latches the Address and the

Data of the fourth byte to be written and starts

the Program/Erase Controller.

Double Word Program Command. The Double

Word Program command is used to write a page

of two adjacent words in parallel. The two words

must differ only for the address A0.

Three bus write cycles are necessary to issue the

Double Word Program command.

■

The first bus cycle sets up the Double Word

Program Command.

■

The second bus cycle latches the Address and

the Data of the first word to be written.

■

The third bus cycle latches the Address and

the Data of the second word to be written and

starts the Program/Erase Controller.

Unlock Bypass Command

The Unlock Bypass command is used in conjunc-

tion with the Unlock Bypass Program command to

program the memory faster than with the standard

program commands. When the cycle time to the

device is long, considerable time saving can be

made by using these commands. Three Bus Write

operations are required to issue the Unlock By-

pass command.

Once the Unlock Bypass command has been is-

sued the bank enters Unlock Bypass mode. When

in Unlock Bypass mode, only the Unlock Bypass

Program and Unlock Bypass Reset commands

are valid. The Unlock Bypass Program command

can be issued to program addresses within the

bank, and the Unlock Bypass Reset command to

return the bank to Read mode. In Unlock Bypass

mode the memory can be read as if in Read mode.

When VPP is applied to the VPP/Write Protect pin

the memory automatically enters the Unlock By-

pass mode and the Unlock Bypass Program com-

mand can be issued immediately. Care must be

taken because applying a 12V VPP voltage to the

VPP/WP pin will temporarily unprotect any protect-

ed block.

Unlock Bypass Program Command

The Unlock Bypass Program command can be

used to program one address in the memory array

at a time. The command requires two Bus Write

operations, the final write operation latches the ad-

dress and data, and starts the Program/Erase

Controller.

The Program operation using the Unlock Bypass

Program command behaves identically to the Pro-

gram operation using the Program command. The

operation cannot be aborted, a Bus Read opera-

tion to the Bank where the command was issued

outputs the Status Register. See the Program

command for details on the behavior.

Unlock Bypass Reset Command

The Unlock Bypass Reset command can be used

to return to Read/Reset mode from Unlock Bypass

Mode. Two Bus Write operations are required to

issue the Unlock Bypass Reset command. Read/

Reset command does not exit from Unlock Bypass

Mode.

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