M29W064FT datasheet(7/69 Pages) NUMONYX

Part #	M29W064FT

Description	64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory

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Manufacturer	NUMONYX [Numonyx B.V]

Direct Link	http://www.numonyx.com

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M29W064FT, M29W064FB

Description

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Description

The M29W064F is a 64 Mbit (8 Mbit x 8 or 4 Mbit x 16) non-volatile memory that can be

read, erased and reprogrammed. These operations can be performed using a single low

voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its read mode.

The memory is divided into blocks that can be erased independently so it is possible to

preserve valid data while old data is erased. Blocks can be protected in units of 256 Kbytes

(generally groups of four 64 Kbyte blocks), to prevent accidental program or erase

commands from modifying the memory. Program and erase commands are written to the

command interface of the memory. An on-chip program/erase controller simplifies the

process of programming or erasing the memory by taking care of all of the special

operations that are required to update the memory contents. The end of a program or erase

operation can be detected and any error conditions identified. The command set required to

control the memory is consistent with JEDEC standards.

The device features an asymmetrical blocked architecture. The device has an array of 135

blocks:

●

8 parameters blocks of 8 Kbytes each (or 4 Kwords each)

●

127 main blocks of 64 Kbytes each (or 32 Kwords each)

M29W064FT has the parameter blocks at the top of the memory address space while the

M29W064FB locates the parameter blocks starting from the bottom.

The M29W064F has an extra block, the extended block, of 128 words in x 16 mode or of

256 bytes in x 8 mode that can be accessed using a dedicated command. The extended

block can be protected and so is useful for storing security information. However the

protection is not reversible, once protected the protection cannot be undone.

Chip Enable, Output Enable and Write Enable signals control the bus operation of the

memory. They allow simple connection to most microprocessors, often without additional

logic.

The VPP/WP signal is used to enable faster programming of the device, enabling multiple

word/byte programming. If this signal is held at VSS, the boot block, and its adjacent

parameter block, are protected from program and erase operations.

The device supports asynchronous random read and page read from all blocks of the

memory array.

The memories are offered in TSOP48 (12 x 20 mm) package.

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