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M29DW640F90N6E Datasheet(PDF) 31 Page - Numonyx B.V

Part # M29DW640F90N6E
Description  64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

M29DW640F90N6E Datasheet(HTML) 31 Page - Numonyx B.V

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Table 8.
Program, Erase times and Program, Erase Endurance cycles
Parameter
Min
Typ(1)(2)
Max(2)
Unit
Chip Erase
80
400(3)
s
Block Erase (64 KBytes)
0.8
6(4)
s
Erase Suspend latency time
50(4)
µs
Byte Program (1, 2, 4 or 8 at-a-time)
10
200(3)
µs
Word Program (1, 2 or 4 at-a-time)
10
200(3)
µs
Chip Program (Byte by Byte)
80
400(3)
s
Chip Program (Word by Word)
40
200(3)
s
Chip Program (quadruple Byte or double Word)
20
100(3)
s
Chip Program (octuple Byte or quadruple Word)
10
50(3)
s
Program Suspend latency time
4
µs
Program/Erase cycles (per Block)
100,000
cycles
Data Retention
20
years
1.
Typical values measured at room temperature and nominal voltages.
2.
Sampled, but not 100% tested.
3.
Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.
4.
Maximum value measured at worst case conditions for both temperature and VCC.


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