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M29DW324DT90N6E Datasheet(PDF) 40 Page - Numonyx B.V |
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M29DW324DT90N6E Datasheet(HTML) 40 Page - Numonyx B.V |
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40 / 50 page  M29DW324DT, M29DW324DB 40/50 Table 27. CFI Query System Interface Information Table 28. Device Geometry Definition Note: For the M29DW324DB, Region 1 corresponds to addresses 000000h to 007FFFh and Region 2 to addresses 008000h to 1FFFFFh. For the M29DW324DT, Region 1 corresponds to addresses 1F8000h to 1FFFFFh and Region 2 to addresses 000000h to 1F7FFFh. Address Data Description Value x16 x8 1Bh 36h 0027h VCC Logic Supply Minimum Program/Erase voltage bit 7 to 4BCD value in volts bit 3 to 0BCD value in 100 mV 2.7V 1Ch 38h 0036h VCC Logic Supply Maximum Program/Erase voltage bit 7 to 4BCD value in volts bit 3 to 0BCD value in 100 mV 3.6V 1Dh 3Ah 00B5h VPP [Programming] Supply Minimum Program/Erase voltage bit 7 to 4HEX value in volts bit 3 to 0BCD value in 100 mV 11.5V 1Eh 3Ch 00C5h VPP [Programming] Supply Maximum Program/Erase voltage bit 7 to 4HEX value in volts bit 3 to 0BCD value in 100 mV 12.5V 1Fh 3Eh 0004h Typical timeout per single byte/word program = 2n µs 16µs 20h 40h 0000h Typical timeout for minimum size write buffer program = 2n µs NA 21h 42h 000Ah Typical timeout per individual block erase = 2n ms 1s 22h 44h 0000h Typical timeout for full Chip Erase = 2n ms NA 23h 46h 0004h Maximum timeout for byte/word program = 2n times typical 256 µs 24h 48h 0000h Maximum timeout for write buffer program = 2n times typical NA 25h 4Ah 0003h Maximum timeout per individual block erase = 2n times typical 8s 26h 4Ch 0000h Maximum timeout for Chip Erase = 2n times typical NA Address Data Description Value x16 x8 27h 4Eh 0016h Device Size = 2n in number of bytes 4 MByte 28h 29h 50h 52h 0002h 0000h Flash Device Interface Code description x8, x16 Async. 2Ah 2Bh 54h 56h 0000h 0000h Maximum number of bytes in multi-byte program or page = 2n NA 2Ch 58h 0002h Number of Erase Block Regions. It specifies the number of regions containing contiguous Erase Blocks of the same size. 2 2Dh 2Eh 5Ah 5Ch 0007h 0000h Region 1 Information Number of Erase Blocks of identical size = 0007h+1 8 2Fh 30h 5Eh 60h 0020h 0000h Region 1 Information Block size in Region 1 = 0020h * 256 byte 8Kbyte 31h 32h 62h 64h 003Eh 0000h Region 2 Information Number of Erase Blocks of identical size = 003Eh+1 63 33h 34h 66h 68h 0000h 0001h Region 2 Information Block size in Region 2 = 0100h * 256 byte 64Kbyte |
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