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IRFR3607PBF Datasheet(PDF) 2 Page - International Rectifier

Part # IRFR3607PBF
Description  HEXFET Power MOSFET
Download  10 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFR3607PBF Datasheet(HTML) 2 Page - International Rectifier

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IRFR/U3607PbF
2
www.irf.com
S
D
G
„ I
SD ≤ 46A, di/dt ≤ 1920A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 56A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T
Jmax, starting TJ = 25°C, L = 0.12mH
RG = 25Ω, IAS = 46A, VGS =10V. Part not recommended for use
above this value.
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
75
–––
–––
V
∆V
(BR)DSS/
∆T
J
Breakdown Voltage Temp. Coefficient
–––
0.096
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
7.34
9.0
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
170
–––
–––
S
Qg
Total Gate Charge
–––
56
84
nC
Qgs
Gate-to-Source Charge
–––
13
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
16
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
40
–––
RG(int)
Internal Gate Resistance
–––
0.55
–––
td(on)
Turn-On Delay Time
–––
16
–––
ns
tr
Rise Time
–––
110
–––
td(off)
Turn-Off Delay Time
–––
43
–––
tf
Fall Time
–––
96
–––
Ciss
Input Capacitance
–––
3070
–––
pF
Coss
Output Capacitance
–––
280
–––
Crss
Reverse Transfer Capacitance
–––
130
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related)
j –––
380
–––
Coss eff. (TR) Effective Output Capacitance (Time Related)
h
–––
610
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
80
c
A
(Body Diode)
ISM
Pulsed Source Current
–––
–––
310
(Body Diode)
d
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
33
50
ns
TJ = 25°C
VR = 64V,
–––
39
59
TJ = 125°C
IF = 46A
Qrr
Reverse Recovery Charge
–––
32
48
nC
TJ = 25°C
di/dt = 100A/µs
g
–––
47
71
TJ = 125°C
IRRM
Reverse Recovery Current
–––
1.9
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VDS = 50V, ID = 46A
ID = 46A
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
VDS = 38V
Conditions
VGS = 10V
g
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
j
VGS = 0V, VDS = 0V to 60V
h
TJ = 25°C, IS = 46A, VGS = 0V
g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 5mA
d
VGS = 10V, ID = 46A
g
VDS = VGS, ID = 100µA
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
ID = 46A
RG = 6.8
VGS = 10V
g
VDD = 49V
ID = 46A, VDS =0V, VGS = 10V


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