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STF11NM60N Datasheet(PDF) 6 Page - STMicroelectronics |
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STF11NM60N Datasheet(HTML) 6 Page - STMicroelectronics |
6 / 21 page Electrical characteristics STD11NM60N/-1 - STB11NM60N/-1 - STF11NM60N - STP11NM60N 6/21 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) (see Figure 23) 22 18.5 50 12 ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM Source-drain current Source-drain current (pulsed) 10 40 A A VSD (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 10 A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD =10 A, di/dt =100 A/µs, VDD =100 V (see Figure 20) 340 3.26 19.2 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current VDD =100 V di/dt =100 A/µs, ISD = 10 A TJ = 150 °C (see Figure 20) 460 4.42 19.2 ns µC A |
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