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EMIF06-10006C2 Datasheet(PDF) 2 Page - STMicroelectronics |
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EMIF06-10006C2 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 9 page Characteristics EMIF06-10006C2 2/9 1 Characteristics Figure 2. Basic cell configuration Table 1. Absolute Ratings (limiting values) Symbol Parameter and test conditions Value Unit PR DC power per resistance 0.1 W PT Total DC power per package 0.6 W Tj Maximum junction temperature 125 ° C Top Operating temperature range - 40 to + 85 ° C Tstg Storage temperature range 125 ° C Table 2. Electrical Characteristics (Tamb = 25 °C) Symbol Parameter VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage Rd Dynamic impedance IPP Peak pulse current RI/O Series resistance between Input and output Cline Capacitance per line Symbol Test conditions Min. Typ. Max. Unit VBR IR = 1 mA 5.5 7 9 V IRM VRM = 3.3 V per line 500 nA RI/O I = 10 mA 80 100 120 Ω Cline VR = 2.5 V, F = 1 MHz, 30 mV (on filter cells) 50 60 70 pF Output 4 Output 5 Output 6 Input 1 30 pF 30 pF 100 Ω Output 1 Input 4 Input 5 Input 6 30 pF 30 pF 100 Ω 30 pF 30 pF 100 Ω 30 pF 30 pF 100 Ω Input 2 Output 2 100 Ω 30 pF 30 pF Input 3 Output 3 30 pF 30 pF 100 Ω I V IF VF IRM IR IPP VRM VBR VCL |
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