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T2050H-6T Datasheet(PDF) 5 Page - STMicroelectronics |
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T2050H-6T Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 10 page T2035H, T2050H Characteristics 5/10 Figure 9. Relative variation of critical rate of decrease of main current (dI/dt)c versus reapplied (dV/dt)c (typical values) Figure 10. Relative variation of critical rate of decrease of main current versus junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10.0 100.0 (dI/dt) c [(dV/dt) c ] / Specified (dI/dt)c (dV/dt)C (V/µs) 0 1 2 3 4 5 6 7 8 25 50 75 100 125 150 (dI/dt) c [Tj] / (dI/dt)c [Tj=150°C] Tj(°C) Figure 11. Leakage current versus junction temperature for different values of blocking voltage (typical values) Figure 12. Acceptable repetitive peak off-state voltage versus case to ambient thermal resistance Figure 13. Thermal resistance junction to ambient versus copper surface under tab 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 50 75 100 125 150 I DRM/IRRM(µA) V DRM=VRRM=400 V V DRM=VRRM=400 V V DRM=VRRM=600 V V DRM=VRRM=600 V V DRM=VRRM=200 V V DRM=VRRM=200 V Tj(°C) 0 5 10 15 20 25 30 35 40 300 350 400 450 500 550 600 R th(c-a)(°C/W) R th(j-c)=1.0 °C/W T J=150 °C VDRM/VRRM(V) 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 R th(j-a)(°C/W) D²PAK SCU(cm²) |
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