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T2035H Datasheet(PDF) 2 Page - STMicroelectronics |
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T2035H Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 10 page  Characteristics T2035H, T2050H 2/10 1 Characteristics Table 2. Absolute maximum ratings Symbol Parameter Value Unit IT(RMS) On-state rms current (full sine wave) TO-220AB, D2PAK Tc = 130 °C 20 A TO-220AB Ins Tc = 105 °C ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) F = 50 Hz t = 20 ms 200 A F = 60 Hz t = 16.7 ms 210 I²tI²t Value for fusing tp = 10 ms 265 A²s dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 150 °C 50 A/µs VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25 °C VDRM/VRRM + 100 V IGM Peak gate current tp = 20 µs Tj = 150 °C 4 A PG(AV) Average gate power dissipation Tj = 150 °C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 150 °C Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test Conditions Quadrant Value Unit T2035H T2050H IGT (1) VD = 12 V RL = 33 Ω I - II - III MAX. 35 50 mA VGT I - II - III MAX. 1.0 V VGD VD = VDRM, RL = 3.3 kΩ I - II - III MIN. 0.15 V IH (2) IT = 500 mA MAX. 35 75 mA IL IG = 1.2 IGT I - III MAX. 50 90 mA II 80 110 dV/dt (2) VD = 67% VDRM, gate open, Tj = 150 °C MIN. 1000 1500 V/µs (dI/dt)c (2) Without snubber, Tj = 150 °C MIN. 27 36 A/ms 1. minimum IGT is guaranted at 20% of IGT max. 2. for both polarities of A2 referenced to A1. |
Similar Part No. - T2035H_07 |
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Similar Description - T2035H_07 |
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