9 / 45 page
17
Ingeniería Electrónica
Sistemas Electrónicos Digitales Avanzados
MEMORY WIDTH & BYTE
ALIGNMENT
Memory
type
Memory
width
Maximum
addressable
bytes per CE
space
Address
output on
EA[21:2]
Represents
ASRAM
x8
1M
A[19:0]
Byte address
x16
2M
A[20:1]
Halfword address
x32
4M
A[21:2]
Word address
SBSRAM
x8
1M
A[19:0]
Byte address
x16
2M
A[20:1]
Halfword address
x32†
4M
A[21:2]
Word address
SDRAM
x8
32M
See
section 10.5
Byte address
x16
64M
See
section 10.5
Halfword address
x32
128M
See
section 10.5
Word address
little endian
device
8-bit
little endian
16-bit device
big endian
device
8-bit
big endian
16-bit device
32-bit device
ED[7:0]
ED[15:8]
ED[23:16]
ED[31:24]
TMS320C621x/C671x
18
Ingeniería Electrónica
Sistemas Electrónicos Digitales Avanzados
Introduction.
Characteristics, signals, memory map, alignment.
Configuration registers.
Types of interface.
Asynchronous interface.
Introduction, waveforms.
Case Study I: Peripheral connection.
Case Study II: Memory connection.
Interface with synchronous static memories.
Synchronous static memories.
Interface description.
Example.
Interface with synchronous dynamic memories.
SDRAM memories.
Interface description.
Example.
TMS320C6000 FAMILY: EMIF
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
