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CY62137CV25/30/33 MoBL®
CY62137CV MoBL®
Document #: 38-05201 Rev. *F
Page 5 of 13
Capacitance[6]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = VCC(typ.)
6
pF
COUT
Output Capacitance
8
pF
Thermal Resistance
Parameter
Description
Test Conditions
FBGA
Package
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)[6]
Still Air, soldered on a 3 x 4.5 inch, two-layer printed
circuit board
55
°C/W
Θ
JC
Thermal Resistance
(Junction to Case)[6]
16
°C/W
AC Test Loads and Waveforms
VCC Typ
VCC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
OUTPUT
VTH
Equivalent to: THÉVENIN EQUIVALENT
ALL INPUT PULSES
RTH
R1
Rise TIme: 1 V/ns
Fall Time: 1 V/ns
Parameters
2.5V
3.0V
3.3V
Unit
R1
16600
1105
1216
Ω
R2
15400
1550
1374
Ω
RTH
8000
645
645
Ω
VTH
1.20
1.75
1.75
V
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions
Min.
Typ.[4]
Max.
Unit
VDR
VCC for Data Retention
1.5
Vccmax
V
ICCDR
Data Retention Current
VCC= 1.5V
CE > VCC – 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V
LL
Ind’l
1
6
µA
Auto
8
SL
Ind’l
4
tCDR
[6]
Chip Deselect to Data Retention Time
0
ns
tR
[7]
Operation Recovery Time
tRC
ns
Data Retention Waveform[8]
Notes:
6. Tested initially and after any design or process changes that may affect these parameters.
7. Full-device AC operation requires linear VCC ramp from VDR to VCC(min.) > 100 µs or stable at VCC(min.) > 100 µs.
8. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.
VCC(min.)
VCC(min.)
tCDR
VDR > 1.5 V
DATA RETENTION MODE
tR
CE or
VCC
BHE.BLE