Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

CY62137FV30LL-45BVXI Datasheet(PDF) 5 Page - Cypress Semiconductor

Part # CY62137FV30LL-45BVXI
Description  2-Mbit (128K x 16) Static RAM
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62137FV30LL-45BVXI Datasheet(HTML) 5 Page - Cypress Semiconductor

  CY62137FV30LL-45BVXI Datasheet HTML 1Page - Cypress Semiconductor CY62137FV30LL-45BVXI Datasheet HTML 2Page - Cypress Semiconductor CY62137FV30LL-45BVXI Datasheet HTML 3Page - Cypress Semiconductor CY62137FV30LL-45BVXI Datasheet HTML 4Page - Cypress Semiconductor CY62137FV30LL-45BVXI Datasheet HTML 5Page - Cypress Semiconductor CY62137FV30LL-45BVXI Datasheet HTML 6Page - Cypress Semiconductor CY62137FV30LL-45BVXI Datasheet HTML 7Page - Cypress Semiconductor CY62137FV30LL-45BVXI Datasheet HTML 8Page - Cypress Semiconductor CY62137FV30LL-45BVXI Datasheet HTML 9Page - Cypress Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 12 page
background image
CY62137FV30 MoBL®
Document Number: 001-07141 Rev. *F
Page 5 of 12
Switching Characteristics
Over the Operating Range [11, 12]
Parameter
Description
45 ns (Ind’l/Auto-A)
55 ns (Auto-E)
Unit
Min
Max
Min
Max
Read Cycle
tRC
Read Cycle Time
45
55
ns
tAA
Address to Data Valid
45
55
ns
tOHA
Data Hold From Address Change
10
10
ns
tACE
CE LOW to Data Valid
45
55
ns
tDOE
OE LOW to Data Valid
22
25
ns
tLZOE
OE LOW to Low Z [13]
55
ns
tHZOE
OE HIGH to High Z [13, 14]
18
20
ns
tLZCE
CE LOW to Low Z [13]
10
10
ns
tHZCE
CE HIGH to High Z [13, 14]
18
20
ns
tPU
CE LOW to Power Up
00
ns
tPD
CE HIGH to Power Down
45
55
ns
tDBE
BLE/BHE LOW to Data Valid
45
55
ns
tLZBE
BLE/BHE LOW to Low Z [13, 15]
510
ns
tHZBE
BLE/BHE HIGH to High Z [13, 14]
18
20
ns
Write Cycle [16]
tWC
Write Cycle Time
45
55
ns
tSCE
CE LOW to Write End
35
40
ns
tAW
Address Setup to Write End
35
40
ns
tHA
Address Hold from Write End
0
0
ns
tSA
Address Setup to Write Start
0
0
ns
tPWE
WE Pulse Width
35
40
ns
tBW
BLE/BHE LOW to Write End
35
40
ns
tSD
Data Setup to Write End
25
25
ns
tHD
Data Hold From Write End
0
0
ns
tHZWE
WE LOW to High Z [13, 14]
18
20
ns
tLZWE
WE HIGH to Low Z [13]
10
10
ns
Notes
11. Test conditions for all parameters, other than tri-state parameters, assume signal transition time of 3 ns (1V/ns) or less, timing reference levels of VCC(typ)/2, input pulse
levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in “AC Test Loads and Waveforms” on page 4.
12. AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. Please see application note AN13842 for further clarification.
13. At any temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device.
14. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedance state.
15. If both byte enables are toggled together, this value is 10 ns.
16. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE = VIL. All signals are ACTIVE to initiate a write and any of these
signals terminate a write by going INACTIVE. The data input setup and hold timing are referenced to the edge of the signal that terminates the write.
[+] Feedback


Similar Part No. - CY62137FV30LL-45BVXI

ManufacturerPart #DatasheetDescription
logo
Cypress Semiconductor
CY62137FV30LL-45BVXI CYPRESS-CY62137FV30LL-45BVXI Datasheet
511Kb / 12P
   2-Mbit (128K x 16) Static RAM
CY62137FV30LL-45BVXI CYPRESS-CY62137FV30LL-45BVXI Datasheet
376Kb / 12P
   2-Mbit (128K x 16) Static RAM
CY62137FV30LL-45BVXI CYPRESS-CY62137FV30LL-45BVXI Datasheet
508Kb / 16P
   2-Mbit (128K x 16) Static RAM
CY62137FV30LL-45BVXI CYPRESS-CY62137FV30LL-45BVXI Datasheet
522Kb / 16P
   2-Mbit (128 K x 16) Static RAM Automatic power down when deselected
More results

Similar Description - CY62137FV30LL-45BVXI

ManufacturerPart #DatasheetDescription
logo
Cypress Semiconductor
CY62137FV30 CYPRESS-CY62137FV30_11 Datasheet
508Kb / 16P
   2-Mbit (128K x 16) Static RAM
CY62136CV CYPRESS-CY62136CV Datasheet
173Kb / 11P
   2-Mbit (128K x 16) Static RAM
CY62136FV30 CYPRESS-CY62136FV30_09 Datasheet
467Kb / 12P
   2 Mbit (128K x 16) Static RAM
CY62137EV30 CYPRESS-CY62137EV30 Datasheet
578Kb / 12P
   2-Mbit (128K x 16) Static RAM
CY62136EV30 CYPRESS-CY62136EV30_09 Datasheet
579Kb / 12P
   2-Mbit (128K x 16) Static RAM
CY62136VN CYPRESS-CY62136VN_09 Datasheet
580Kb / 12P
   2-Mbit (128K x 16) Static RAM
CY62137V CYPRESS-CY62137V Datasheet
214Kb / 11P
   2-Mbit (128K x 16) Static RAM
CY62137V CYPRESS-CY62137V_06 Datasheet
292Kb / 11P
   2-Mbit (128K x 16) Static RAM
CY7C1011CV33 CYPRESS-CY7C1011CV33_10 Datasheet
533Kb / 16P
   2-Mbit (128K x 16) Static RAM
CY62137FV18 CYPRESS-CY62137FV18_10 Datasheet
491Kb / 16P
   2-Mbit (128K x 16) Static RAM
CY62136FV30 CYPRESS-CY62136FV30 Datasheet
508Kb / 12P
   2-Mbit (128K x 16) Static RAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com