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ZXLD1322 Datasheet(PDF) 6 Page - Zetex Semiconductors |
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ZXLD1322 Datasheet(HTML) 6 Page - Zetex Semiconductors |
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ZXLD1322 Issue 1 - January 2008 6 www.zetex.com © Zetex Semiconductors plc 2008 DC-DC convertertoutput parameters Switching NPN transistor NOTES: (c) Measured under pulse conditions. (d) This current is measured via the collectors and emitters of the switch with these connected to ground (0V) (e) Measured under pulse conditions. Peak Current = Ic Symbol Parameter Conditions Min Typ Max Units Toff(100) Discharge pulse width 100% output current 0.7 1.2 1.7 µs Toff(10) Discharge pulse width 10% output current 4 8 12 µs fLXmax Maximum operating frequency 600 KHz fSU Switching frequency in start- up mode VIN=1.2V 50 KHz Symbol Parameter Conditions Min Typ Max Units ISW Average continuous switch current(c) 2A IBON(max) Maximum base current into switch transistor from internal drive circuit(d) 2V<VIN<18V BIAS pin at 0V 30 50 70 mA IBON Base current into switch transistor using external resistor (RBASE) from BIAS pin to ground RBIAS = 1680Ω 10 mA V(BR)CE Collector-Emitter breakdown voltage IC=10µA 15 V VCE(sat) Collector-Emitter saturation voltage IC=0.1A, IB=10mA IC=2A, IB=50mA(e) 50 120 mV mV hFE Static forward current transfer ratio IC=200mA, VCE=2V IC=2A, VCE=2V 209 116 COBO Output capacitance VCB=10V,f=1MHz 64 pF t(on) Turn-on time Ic=0 to IC=2A VIN=10V 30 ns t(off) Turn-off time IC=2A to Ic<100µA 28 ns |
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