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ATC600B121BT250XT Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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ATC600B121BT250XT Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 15 page MRF5S4125NR1 MRF5S4125NBR1 1 RF Device Data Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 500 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single-Carrier N-CDMA Performance @ 465 MHz: VDD = 28 Volts, IDQ = 1100 mA, Pout = 25 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 23 dB Drain Efficiency — 30.2% ACPR @ 750 kHz Offset — -47.6 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 125 Watts CW Output Power Features • Characterized with Series Equivalent Large-Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 200°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature (1,2) TJ 200 °C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 90°C, 125 W CW Case Temperature 90°C, 25 W CW RθJC 0.33 0.43 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. Document Number: MRF5S4125N Rev. 0, 1/2007 Freescale Semiconductor Technical Data MRF5S4125NR1 MRF5S4125NBR1 450-480 MHz, 25 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs CASE 1484-04, STYLE 1 TO-272 WB-4 MRF5S4125NBR1 CASE 1486-03, STYLE 1 TO-270 WB-4 MRF5S4125NR1 © Freescale Semiconductor, Inc., 2007. All rights reserved. |
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