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CNY17 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. CNY17
Description  Optocoupler, Phototransistor Output,
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

CNY17 Datasheet(HTML) 2 Page - Vishay Siliconix

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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83606
2
Rev. 1.5, 09-Nov-05
CNY17
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection
Note
Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
OUTPUT
Collector emitter breakdown voltage
BVCEO
70
V
Emitter base breakdown voltage
BVEBO
7.0
V
Collector current
IC
50
mA
t < 1.0 ms
IC
100
mA
Power dissipation
Pdiss
150
mW
COUPLER
Isolation test voltage
between emitter and detector referred to climate
DIN 50014, part 2, Nov. 74
t = 1.0 s
VISO
5300
VRMS
Creepage distance
≥ 7.0
mm
Clearance distance
≥ 7.0
mm
Isolation thickness between
emitter and detector
≥ 0.4
mm
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Soldering temperature
max. 10 s, dip soldering: distance to
seating plane
≥ 1.5 mm
Tsld
260
°C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
ELECTRICAL CHARACTERISTCS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
1.25
1.65
V
Breakdown voltage
IR = 10 mA
VBR
6.0
V
Reverse current
VR = 6.0 V
IR
0.01
10
µA
Capacitance
VR = 0 V, f = 1.0 MHz
CO
25
pF
Thermal resistance
Rth
750
K/W
OUTPUT
Collector emitter capacitance
VCE = 5.0 V, f = 1.0 MHz
CCE
5.2
pF
Collector base capacitance
VCB = 5.0 V, f = 1.0 MHz
CCB
6.5
pF
Emitter base capacitance
VEB = 5.0 V, f = 1.0 MHz
CEB
7.5
pF
Thermal resistance
Rth
500
K/W
COUPLER
Collector emitter, saturation voltage
VF = 10 mA, IC = 2.5 mA
VCEsat
0.25
0.4
V
Coupling capacitance
CC
0.6
pF
Collector emitter, leakage current
VCE = 10 V
CNY17-1
ICEO
2.0
50
nA
CNY17-2
ICEO
2.0
50
nA
CNY17-3
ICEO
5.0
100
nA
CNY17-4
ICEO
5.0
100
nA


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