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CY2310ANZ
Document #: 38-07142 Rev. *B
Page 3 of 8
Maximum Ratings
Supply Voltage to Ground Potential ............... –0.5V to +7.0V
DC Input Voltage (Except BUF_IN)........–0.5V to VDD + 0.5V
DC Input Voltage (BUF_IN)............................ –0.5V to +7.0V
Storage Temperature ................................. –65
°C to +150°C
Junction Temperature ................................................. 150
°C
Static Discharge Voltage
(per MIL-STD-883, Method 3015) ............................. >2000V
Operating Conditions
Parameter
Description
Min.
Max.
Unit
VDD
Supply Voltage
3.135
3.465
V
TA
Operating Temperature (Ambient Temperature)
0
70
°C
CL
Load Capacitance
20
30
pF
CIN
Input Capacitance
7
pF
tPU
Power-up time for all VDDs to reach minimum specified voltage
(power ramps must be monotonic)
0.05
50
ms
Electrical Characteristics
Parameter
Description
Test Conditions
Min.
Max.
Unit
VIL
Input LOW Voltage[1]
Except serial interface pins
0.8
V
VILiic
Input LOW Voltage
For serial interface pins only
0.7
V
VIH
Input HIGH Voltage[1]
2.0
V
IIL
Input LOW Current
(BUF_IN input)
VIN = 0V
–10
10
µA
IIL
Input LOW Current
(Except BUF_IN Pin)
VIN = 0V
100
µA
IIH
Input HIGH Current
VIN = VDD
–10
10
µA
VOL
Output LOW Voltage[2]
IOL = 25 mA
0.4
V
VOH
Output HIGH Voltage[2]
IOH = –36 mA
2.4
V
IDD
Supply Current[2]
Unloaded outputs, 100-MHz
200
mA
IDD
Supply Current
Loaded outputs, 100-MHz
360
mA
IDD
Supply Current[2]
Unloaded outputs, 66.67-MHz
150
mA
IDD
Supply Current
Loaded outputs, 66.67-MHz
230
mA
IDDS
Supply Current
BUF_IN=VDD or VSS
All other inputs at VDD
500
µA
Notes:
1. BUF_IN input has a threshold voltage of VDD/2.
2. Parameter is guaranteed by design and characterization. Not 100% tested in production.
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