PRELIMINARY
CY14B104L, CY14B104N
4-Mbit (512K x 8/256K x 16) nvSRAM
Cypress Semiconductor Corporation
•
198 Champion Court
•
San Jose
, CA 95134-1709
•
408-943-2600
Document #: 001-07102 Rev. *F
Revised January 02, 2008
Features
■ 15 ns, 25 ns, and 45 ns access times
■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16
(CY14B104N)
■ Hands off automatic STORE on power down with only a small
capacitor
■ STORE to QuantumTrap
® nonvolatile elements initiated by
software, device pin or AutoStore® on power down
■ RECALL to SRAM initiated by software or power up
■ Infinite read, write, and recall cycles
■ 8 mA typical ICC at 200 ns cycle time
■ 200,000 STORE cycles to QuantumTrap
■ 20 year data retention
■ Single 3V +20%, –10% operation
■ Commercial and industrial temperatures
■ FBGA and TSOP - II packages
■ RoHS compliance
Functional Description
The Cypress CY14B104L/CY14B104N is a fast static RAM, with
a nonvolatile element in each memory cell. The memory is
organized as 512K words of 8 bits each or 256K words of 16 bits
each.
The
embedded
nonvolatile
elements
incorporate
QuantumTrap technology, producing the world’s most reliable
nonvolatile memory. The SRAM provides infinite read and write
cycles, while independent nonvolatile data resides in the highly
reliable QuantumTrap cell. Data transfers from the SRAM to the
nonvolatile elements (the STORE operation) takes place
automatically at power down. On power up, data is restored to
the SRAM (the RECALL operation) from the nonvolatile memory.
Both the STORE and RECALL operations are also available
under software control.
A0 - A18
Address
WE
OE
CE
VCC
VSS
VCAP
DQ0 - DQ7
HSB
CY14B104L
BHE
BLE
Logic Block Diagram
[1]
[1]
CY14B104N
Note
1. Address A0 - A18 and Data DQ0 - DQ7 for x8 configuration, Address A0 - A17 and Data DQ0 - DQ15 for x16 configuration.
[+] Feedback