CY23EP09
Document #: 38-07760 Rev. *B
Page 3 of 13
Absolute Maximum Conditions
Supply Voltage to Ground Potential ................. –0.5V to 4.6V
DC Input Voltage ...................................... VSS – 0.5V to 4.6V
Storage Temperature .................................... –65°C to 150°C
Junction Temperature .................................................. 150°C
Static Discharge Voltage
(per MIL-STD-883, Method 3015.............................. > 2000V
Operating Conditions
Parameter
Description
Min.
Max.
Unit
VDD3.3
3.3V Supply Voltage
3.0
3.6
V
VDD2.5
2.5V Supply Voltage
2.3
2.7
V
TA
Operating Temperature (Ambient Temperature)—Commercial
0
70
°C
Operating Temperature (Ambient Temperature)—Industrial
–40
85
°C
CL
[5]
Load Capacitance, <100 MHz, 3.3V
–
30
pF
Load Capacitance, <100 MHz, 2.5V with High drive
–
30
pF
Load Capacitance, <133.3 MHz, 3.3V
–
22
pF
Load Capacitance, <133.3 MHz, 2.5V with High drive
–
22
pF
Load Capacitance, <133.3 MHz, 2.5V with Standard drive
–
15
pF
Load Capacitance, >133.3 MHz, 3.3V
–
15
pF
Load Capacitance, >133.3 MHz, 2.5V with High drive
–
15
pF
CIN
Input Capacitance[6]
–5
pF
BW
Closed-loop bandwidth (typical), 3.3V
1–1.5
MHz
Closed-loop bandwidth (typical), 2.5V
0.8
MHz
ROUT
Output Impedance (typical), 3.3V High drive
29
Ω
Output Impedance (typical), 3.3V Standard drive
41
Ω
Output Impedance (typical), 2.5V High drive
37
Ω
Output Impedance (typical), 2.5V Standard drive
41
Ω
tPU
Power-up time for all VDD’s to reach minimum specified voltage
(power ramps must be monotonic)
0.01
50
ms
Theta Ja[7]
Dissipation, Junction to Ambient, 16-pin SOIC
95
°C/W
Dissipation, Junction to Ambient, 16-pin TSSOP
70
°C/W
Theta Jc[7]
Dissipation, Junction to Case, 16-pin SOIC
58
°C/W
Dissipation, Junction to Case, 16-pin TSSOP
48
°C/W
3.3V DC Electrical Specifications
Parameter
Description
Test Conditions
Min.
Max.
Unit
VDD
Supply Voltage
3.0
3.6
V
VIL
Input LOW Voltage
–
0.8
V
VIH
Input HIGH Voltage
2.0
VDD+0.3
V
IIL
Input Leakage Current
0 < VIN < VIL
–±10
µA
IIH
Input HIGH Current
VIN = VDD
–
100
µA
VOL
Output LOW Voltage
IOL = 8 mA (standard drive)
IOL = 12 mA (High drive)
–
–
0.4
0.4
V
V
VOH
Output HIGH Voltage
IOH = –8 mA (standard drive)
IOH = –12 mA (High drive)
2.4
2.4
–
–
V
V
IDD (PD mode)
Power Down Supply Current REF = 0 MHz (Commercial)
–
12
µA
REF = 0 MHz (Industrial)
–
25
µA
IDD
Supply Current
Unloaded outputs, 66-MHz REF
–
30
mA
Notes:
5. Applies to Test Circuit #1.
6. Applies to both REF Clock and internal feedback path on CLKOUT.
7. Theta Ja, EIA JEDEC 51 test board conditions, 2S2P; Theta Jc Mil-Spec 883E Method 1012.1.