CY7C1471BV25
CY7C1473BV25, CY7C1475BV25
Document #: 001-15013 Rev. *E
Page 10 of 30
included to greatly simplify read/modify/write sequences, which
can be reduced to simple byte write operations.
Because
the
CY7C1471BV25,
CY7C1473BV25,
and
CY7C1475BV25 are common IO devices, data must not be
driven into the device while the outputs are active. The OE can
be deasserted HIGH before presenting data to the DQs and
DQPX inputs. This tri-states the output drivers. As a safety
precaution, DQs and DQPX are automatically tri-stated during
the data portion of a write cycle, regardless of the state of OE.
Burst Write Accesses
The CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25
have an on-chip burst counter that makes it possible to supply a
single address and conduct up to four Write operations without
reasserting the address inputs. Drive ADV/LD LOW to load the
initial address, as described in the Single Write Access section.
When ADV/LD is driven HIGH on the subsequent clock rise, the
Chip Enables (CE1, CE2, and CE3) and WE inputs are ignored
and the burst counter is incremented. You must drive the correct
BWX inputs in each cycle of the Burst Write to write the correct
data bytes.
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ places
the SRAM in a power conservation “sleep” mode. Two clock
cycles are required to enter into or exit from this “sleep” mode.
While in this mode, data integrity is guaranteed. Accesses
pending when entering the “sleep” mode are not considered valid
nor is the completion of the operation guaranteed. You must
select the device before entering the “sleep” mode. CE1, CE2,
and CE3, must remain inactive for the duration of tZZREC after the
ZZ input returns LOW.
Table 2. Interleaved Burst Address Table
(MODE = Floating or VDD)
First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
Fourth
Address
A1: A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Table 3. Linear Burst Address Table
(MODE = GND)
First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
Fourth
Address
A1: A0
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
Min
Max
Unit
IDDZZ
Sleep mode standby current
ZZ > VDD – 0.2V
120
mA
tZZS
Device operation to ZZ
ZZ > VDD – 0.2V
2tCYC
ns
tZZREC
ZZ recovery time
ZZ < 0.2V
2tCYC
ns
tZZI
ZZ active to sleep current
This parameter is sampled
2tCYC
ns
tRZZI
ZZ Inactive to exit sleep current
This parameter is sampled
0
ns
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