36-Mbit DDR-II SIO SRAM 2-Word
Burst Architecture
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Cypress Semiconductor Corporation
•
198 Champion Court
•
San Jose
, CA 95134-1709
•
408-943-2600
Document #: 001-07035 Rev. *C
Revised September 27, 2007
Features
■ 36-Mbit density (4M x 8, 4M x 9, 2M x 18, 1M x 36)
■ 300 MHz clock for high bandwidth
■ 2-word burst for reducing address bus frequency
■ Double Data Rate (DDR) interfaces
(data transferred at 600 MHz) at 300 MHz
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
■ Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
■ Synchronous internally self-timed writes
■ DDR-II operates with 1.5 cycle read latency when the DLL is
enabled
■ Operates similar to a DDR-I device with 1 cycle read latency in
DLL off mode
■ 1.8V core power supply with HSTL inputs and outputs
■ Variable drive HSTL output buffers
■ Expanded HSTL output voltage (1.4V–VDD)
■ Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ JTAG 1149.1 compatible test access port
■ Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1422BV18 – 4M x 8
CY7C1429BV18 – 4M x 9
CY7C1423BV18 – 2M x 18
CY7C1424BV18 – 1M x 36
Functional Description
The CY7C1422BV18, CY7C1429BV18, CY7C1423BV18, and
CY7C1424BV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with Double Data Rate Separate IO (DDR-II SIO)
architecture. The DDR-II SIO consists of two separate ports: the
read port and the write port to access the memory array. The
read port has data outputs to support read operations and the
write port has data inputs to support write operations. The DDR-II
SIO has separate data inputs and data outputs to completely
eliminate the need to “turn-around” the data bus required with
common IO devices. Access to each port is accomplished
through a common address bus. Addresses for read and write
are latched on alternate rising edges of the input (K) clock. Write
data is registered on the rising edges of both K and K. Read data
is driven on the rising edges of C and C if provided, or on the
rising edge of K and K if C/C are not provided. Each address
location is associated with two 8-bit words in the case of
CY7C1422BV18,
two
9-bit
words
in
the
case
of
CY7C1429BV18,
two
18-bit
words
in
the
case
of
CY7C1423BV18, and two 36-bit words in the case of
CY7C1424BV18 that burst sequentially into or out of the device.
Asynchronous inputs include an output impedance matching
input (ZQ). Synchronous data outputs are tightly matched to the
two output echo clocks CQ/CQ, eliminating the need to capture
data separately from each individual DDR-II SIO SRAM in the
system design. Output data clocks (C/C) enable maximum
system clocking and data synchronization flexibility.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Selection Guide
Description
300 MHz
278 MHz
250 MHz
200 MHz
167 MHz
Unit
Maximum Operating Frequency
300
278
250
200
167
MHz
Maximum Operating Current
x8
825
775
700
600
500
mA
x9
845
775
700
600
500
x18
880
815
740
600
500
x36
980
890
800
665
560
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