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CY7C1917BV18-278BZC Datasheet(PDF) 7 Page - Cypress Semiconductor

Part # CY7C1917BV18-278BZC
Description  18-Mbit DDR-II SRAM 4-Word Burst Architecture
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1917BV18-278BZC Datasheet(HTML) 7 Page - Cypress Semiconductor

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CY7C1317BV18
CY7C1917BV18
CY7C1319BV18
CY7C1321BV18
Document Number: 38-05622 Rev. *C
Page 7 of 28
Functional Overview
The CY7C1317BV18, CY7C1917BV18, CY7C1319BV18, and
CY7C1321BV18 are synchronous pipelined Burst SRAMs
equipped with a DDR interface.
Accesses are initiated on the rising edge of the positive input
clock (K). All synchronous input timing is referenced from the
rising edge of the input clocks (K and K) and all output timing
is referenced to the rising edge of the output clocks (C/C or
K/K when in single-clock mode).
All synchronous data inputs (D[x:0]) pass through input
registers controlled by the rising edge of the input clocks (K
and K). All synchronous data outputs (Q[x:0]) pass through
output registers controlled by the rising edge of the output
clocks (C/C or K/K when in single clock mode).
All synchronous control (R/W, LD, BWS[0:X]) inputs pass
through input registers controlled by the rising edge of the
input clock (K).
CY7C1319BV18 is described in the following sections. The
same
basic
descriptions
apply
to
CY7C1317BV18,
CY7C1917BV18, and CY7C1321BV18.
Read Operations
The CY7C1319BV18 is organized internally as a 1M x 18
SRAM. Accesses are completed in a burst of four sequential
18-bit data words. Read operations are initiated by asserting
R/W HIGH and LD LOW at the rising edge of the positive input
clock (K). The address presented to the Address inputs is
stored in the Read address register and the least two signif-
icant bits of the address are presented to the burst counter.
The burst counter increments the address in a linear fashion.
Following the next K clock rise the corresponding 18-bit word
of data from this address location is driven onto the Q[17:0]
using C as the output timing reference. On the subsequent
rising edge of C the next 18-bit data word from the address
location generated by the burst counter is driven onto the
Q[17:0]. This process continues until all four 18-bit data words
have been driven out onto Q[17:0]. The requested data will be
valid 0.45 ns from the rising edge of the output clock (C or C,
or K or K when in single clock mode, 250-MHz and 200-MHz
device). In order to maintain the internal logic, each Read
access must be allowed to complete. Each Read access
consists of four 18-bit data words and takes two clock cycles
to complete. Therefore, Read accesses to the device can not
be initiated on two consecutive K clock rises. The internal logic
of the device will ignore the second Read request. Read
accesses can be initiated on every other K clock rise. Doing
so will pipeline the data flow such that data is transferred out
of the device on every rising edge of the output clocks (C/C or
K/K when in single-clock mode).
When Read access is deselected, the CY7C1319BV18 will
first complete the pending Read transactions. Synchronous
internal circuitry will automatically tri-state the outputs
following the next rising edge of the positive output clock (C).
This will allow for a seamless transition between devices
without the insertion of wait states in a depth expanded
memory.
CQ
Clock Output CQ is referenced with respect to C. This is a free-running clock and is synchronized to the input
clock for output data (C) of the DDR-II. In the single clock mode, CQ is generated with respect
to K. The timings for the echo clocks are shown in the AC Timing table.
ZQ
Input
Output Impedance Matching Input. This input is used to tune the device outputs to the system
data bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a
resistor connected between ZQ and ground. Alternately, this pin can be connected directly to
VDDQ, which enables the minimum impedance mode. This pin cannot be connected directly to
GND or left unconnected.
DOFF
Input
DLL Turn Off - active LOW. Connecting this pin to ground will turn off the DLL inside the device.
The timings in the DLL turned off operation will be different from those listed in this data sheet.
TDO
Output
TDO for JTAG.
TCK
Input
TCK pin for JTAG.
TDI
Input
TDI pin for JTAG.
TMS
Input
TMS pin for JTAG.
NC
N/A
Not connected to the die. Can be tied to any voltage level.
NC/36M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/72M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/144M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/288M
N/A
Not connected to the die. Can be tied to any voltage level.
VREF
Input-
Reference
Reference Voltage Input. Static input used to set the reference level for HSTL inputs and Outputs
as well as AC measurement points.
VDD
Power Supply Power supply inputs to the core of the device.
VSS
Ground
Ground for the device.
VDDQ
Power Supply Power supply inputs for the outputs of the device.
Pin Definitions (continued)
Pin Name
I/O
Pin Description


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