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DS1284Q+R Datasheet(PDF) 9 Page - Dallas Semiconductor

Part # DS1284Q+R
Description  Watchdog Timekeepers
Download  18 Pages
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Manufacturer  DALLAS [Dallas Semiconductor]
Direct Link  https://www.maximintegrated.com/en.html
Logo DALLAS - Dallas Semiconductor

DS1284Q+R Datasheet(HTML) 9 Page - Dallas Semiconductor

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DS1284/DS1286
9 of 18
ABSOLUTE MAXIMUM RATINGS
Voltage Range on Any Pin Relative to Ground……………………………………………..-0.3V to +7.0V
Operating Temperature Range
Commercial………………………………………………………………………………..0
°C to +70°C
Industrial………………………………………………………………………………...-40°C to +85°C
Storage Temperature Range………………………………………………………………...-40°C to +85°C
Soldering Temperature………………..……………...See IPC/JEDEC J-STD-020 Specification (Note 13)
Stresses beyond those listed as “Absolute Maxim Ratings” may cause permanent damage to the device. These are stress ratings only, any
functional operation of the device at these or any other conditions beyond the those indicated in operations section of the specifications is no
implied. Exposure to absolute maximum ratings for extended periods may affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
(TA = -40°C to +85°C or 0°C to +70°C.)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
Power-Supply Voltage
VCC
4.5
5.0
5.5
V
10
Input Logic 1
VIH
2.2
VCC +
0.3
V
10
Input Logic 0
VIL
-0.3
+0.8
V
10
VBAT Input Voltage
VBAT
2.4
3.0
3.5
V
10
DC ELECTRICAL CHARACTERISTICS
(VCC = 5V ±10%, TA = -40°C to +85°C or 0°C to +70°C.)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
Input Leakage Current
IIL
-1.0
+1.0
µA
Output Leakage Current
ILO
-1.0
+1.0
µA
I/O Leakage Current
CE
≥ VIH ≤ VCC
ILIO
-1.0
+1.0
µA
Output Current at 2.4V
IOH
-1.0
mA
Output Current at 0.4V
IOL
2.0
mA
Standby Current
CE = 2.2V
ICCS1
3.0
7.0
mA
Standby Current
CE > VCC - 0.5
ICCS2
4.0
mA
Active Current
ICC
15
mA
Write-Protection Voltage
VTP
1.088
x VBAT
1.26 x
VBAT
1.324
x VBAT
V
DC ELECTRICAL CHARACTERISTICS
(VCC = 0V, VBAT = 2.4V to 3.5V, TA = 0°C to +70°C.)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
Battery Current (
EOSC = 0)
IBAT
+0.5
+0.6
µA


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