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P-TO263-3-2 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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P-TO263-3-2 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page 2002-01-09 Page 1 Preliminary data SPI47N10L SPP47N10L,SPB47N10L SIPMOS Power-Transistor Product Summary VDS 100 V RDS(on) 26 m ID 47 A Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated P-TO263-3-2 P-TO220-3-1 P-TO262-3-1 Marking 47N10L 47N10L 47N10L Type Package Ordering Code SPP47N10L P-TO220-3-1 Q67040-S4177 SPB47N10L P-TO263-3-2 Q67040-S4176 SPI47N10L P-TO262-3-1 Q67060-S7432 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC=25°C TC=100°C ID 47 33 A Pulsed drain current TC=25°C ID puls 188 Avalanche energy, single pulse ID=47 A , VDD=25V, RGS=25 EAS 400 mJ Avalanche energy, periodic limited by Tjmax EAR 17.5 Reverse diode dv/dt IS=47A, VDS=0V, di/dt=200A/µs dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 175 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56 |
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