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DS36C200 Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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DS36C200 Datasheet(HTML) 2 Page - National Semiconductor (TI) |
2 / 9 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage (V CC) −0.3V to +6V Enable Input Voltage (DE, RE*) −0.3V to (V CC + 0.3V) Voltage (DI/RO) −0.3V to +5.9V Voltage (DO/RI±) −0.3V to +5.9V Maximum Package Power Dissipation @+25˚C M Package 1255 mW Derate M Package 10.04 mW/˚C above +25˚C Storage Temperature Range −65˚C to +150˚C Lead Temperature Range (Soldering, 4 sec.) +260˚C ESD Rating (Note 4) (HBM, 1.5 k Ω, 100 pF) ≥ 3.5 kV (EIAJ, 0 Ω, 200 pF) ≥ 300V Recommended Operating Conditions Min Typ Max Units Supply Voltage (V CC) +4.5 +5.0 +5.5 V Receiver Input Voltage 0 2.4 V Operating Free Air Temperature (T A) 0 25 70 ˚C Electrical Characteristics (Notes 2, 3, 7) Over supply voltage and operating temperature ranges, unless otherwise specified Symbol Parameter Conditions Pin Min Typ Max Units DIFFERENTIAL DRIVER CHARACTERISTICS (RE* =V CC) V OD Output Differential Voltage R L =55 Ω,(Figure 1) DO+, DO− 172 210 285 mV ∆V OD V OD Magnitude Change 0 4 35 mV V OH Output High Voltage 1.36 V V OL Output Low Voltage 1.15 V V OS Offset Voltage 1.0 1.25 1.6 V ∆V OS Offset Magnitude Change 0 5 25 mV I OZD TRI-STATE Leakage V OUT =VCC or GND −10 ±1 +10 µA I OXD Power-Off Leakage V OUT = 5.5V or GND, VCC = 0V −10 ±1 +10 µA I OSD Output Short Circuit Current V OUT =0V −4 −9 mA DIFFERENTIAL RECEIVER CHARACTERISTICS (DE = GND) V TH Input Threshold High V CM = 0V to 2.3V RI+, RI− +100 mV V TL Input Threshold Low −100 mV I IN Input Current V IN = +2.4V or 0V −10 ±1 +10 µA V OH Output High Voltage I OH = −400 µA RO 3.8 4.9 V Inputs Open 3.8 4.9 V Inputs Terminated, R t =55 Ω 3.8 4.9 V Inputs Shorted, V ID = 0V 4.9 V V OL Output Low Voltage I OL = 2.0 mA, VID = −200 mV 0.1 0.4 V I OSR Output Short Circuit Current V OUT = 0V −15 −60 −100 mA DEVICE CHARACTERISTICS V IH Input High Voltage DI, DE RE* 2.0 V CC V V IL Input Low Voltage GND 0.8 V I IH Input High Current V IN =VCC or 2.4V ±1 ±10 µA I IL Input Low Current V IN = GND or 0.4V ±1 ±10 µA V CL Input Clamp Voltage I CL = −18 mA −1.5 −0.8 V I CCD Power Supply Current No Load, DE = RE* =V CC V CC 37 mA R L =55 Ω, DE=RE* =V CC 11 17 mA I CCR DE=RE* = 0V 6 10 mA Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation. Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except VOD and VID. Note 3: All typicals are given for VCC = +5.0V and TA = +25˚C. Note 4: ESD Rating: HBM (1.5 k Ω, 100 pF) ≥ 3.5 kV EIAJ (0 Ω, 200 pF) ≥ 300V www.national.com 2 |
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