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OP462DS Datasheet(PDF) 4 Page - Analog Devices |
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OP462DS Datasheet(HTML) 4 Page - Analog Devices |
4 / 20 page OP162/OP262/OP462 Rev. F | Page 4 of 20 @ VS = 3.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted. Table 2. Electrical Characteristics Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS OP162G, OP262G, OP462G 50 325 µV G, H grades, –40°C ≤ TA ≤ +125°C 1 mV D grade 0.8 3 mV –40°C ≤ TA ≤ +125°C 5 mV Input Bias Current IB 360 600 nA Input Offset Current IOS ±2.5 ±25 nA Input Voltage Range VCM 0 2 V Common-Mode Rejection CMRR 0 V ≤ VCM ≤ 2.0 V, –40°C ≤ TA ≤ +125°C 70 110 dB Large Signal Voltage Gain AVO RL = 2 kΩ, 0.5 V ≤ VOUT ≤ 2.5 V 20 V/mV RL = 10 kΩ, 0.5 V ≤ VOUT ≤ 2.5 V 20 30 V/mV Long-Term Offset Voltage1 VOS G grade 600 µV OUTPUT CHARACTERISTICS Output Voltage Swing High VOH IL = 250 µA 2.95 2.99 V IL= 5 mA 2.85 2.93 V Output Voltage Swing Low VOL IL = 250 µA 14 50 mV IL= 5 mA 66 150 mV POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 7 V, –40°C ≤ TA ≤ +125°C 60 110 dB Supply Current/Amplifier ISY OP162, VOUT = 1.5 V 600 700 µA –40°C ≤ TA ≤ +125°C 1 mA OP262, OP462, VOUT = 1.5 V 500 650 µA –40°C ≤ TA ≤ +125°C 850 µA DYNAMIC PERFORMANCE Slew Rate SR RL = 10 kΩ 10 V/µs Settling Time tS To 0.1%, AV = –1, VO = 2 V step 575 ns Gain Bandwidth Product GBP 15 MHz Phase Margin φm 59 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.5 µV p-p Voltage Noise Density en f = 1 kHz 9.5 nV/√Hz Current Noise Density in f = 1 kHz 0.4 pA/√Hz 1 Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125°C, with an LTPD of 1.3. |
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