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LM4888 Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LM4888 Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 23 page Absolute Maximum Ratings (Note 3) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage 6.0V Storage Temperature −65˚C to +150˚C Input Voltage −0.3V to V DD +0.3V Power Dissipation (Note 4) Internally limited ESD Susceptibility (Note 5) 2000V ESD Susceptibility (Note 6) 200V Junction Temperature 150˚C Solder Information Small Outline Package Vapor Phase (60 sec.) 215˚C Infrared (15 sec.) 220˚C Thermal Resistance θ JC (typ) — SQA24B 3˚C/W θ JA (typ) — SQA24B 42˚C/W Operating Ratings Temperature Range T MIN ≤ T A ≤ T MAX −40˚C ≤ T A ≤ 85˚C Supply Voltage 2.7V ≤ V DD ≤ 5.5V Electrical Characteristics (5V) (Notes 3, 7, 13) The following specifications apply for V DD = 5V unless otherwise noted. Limits apply for TA = 25˚C. Symbol Parameter Conditions LM4888 Units (Limits) Typical Limit (Note 8) (Note 9) V DD Supply Voltage 2.7 V (min) 5.5 V (max) I DD Quiescent Power Supply Current V IN = 0V, IO = 0A (Note 10) , BTL mode 6 10 mA (max) V IN = 0V, IO = 0A (Note 10) , SE mode 3.0 6 mA (max) I SD Shutdown Current GND applied to the SHUTDOWN pin 0.04 2 µA (max) V IH Headphone Sense High Input Voltage 3.7 4 V (min) V IL Headphone Sense Low Input Voltage 2.6 0.8 V (max) V IHSD Shutdown, Headphone micro, 3D control High Input voltage 1.2 1.4 V (min) V ILSD Shutdown, Headphone micro, 3D control Low Input voltage 1 0.4 V (max) T WU Turn On Time 1µF Bypass Cap (C6) 140 ms Electrical Characteristics for Bridged-Mode Operation (5V) (Notes 3, 7, 13) The following specifications apply for V DD = 5V unless otherwise specified. Limits apply for TA = 25˚C. Symbol Parameter Conditions LM4888 Units (Limits) Typical Limit (Note 8) (Note 9) V OS Output Offset Voltage V IN = 0V 5 25 mV (max) P O Output Power (Note 11) THD+N = 1%, f = 1kHz (Note 12) LM4888SQ, R L =3 Ω 2.4 W LM4888SQ, R L =4 Ω 2.1 W LM4888SQ, R L =8 Ω 1.3 1.0 W (min) THD+N = 10%, f = 1kHz (Note 12) LM4888SQ, R L =3 Ω 3.0 W LM4888SQ, R L =4 Ω 2.5 W LM4888SQ, R L =8 Ω 1.7 W THD+N Total Harmonic Distortion+Noise 1kHz, A VD =2 LM4888SQ, R L =4 Ω,P O = 1W 0.10 % LM4888SQ, R L =8 Ω,P O = .4W 0.06 % www.national.com 3 |
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