Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

FPD750SOT343 Datasheet(PDF) 2 Page - Filtronic Compound Semiconductors

Part No. FPD750SOT343
Description  LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Download  11 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  FILTRONIC [Filtronic Compound Semiconductors]
Homepage  http://www.filtronic.co.uk/
Logo 

FPD750SOT343 Datasheet(HTML) 2 Page - Filtronic Compound Semiconductors

 
Zoom Inzoom in Zoom Outzoom out
 2 / 11 page
background image
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
2
Datasheet v3.0
FPD750SOT343
ABSOLUTE MAXIMUM RATING1:
PARAMETER
SYMBOL
TEST CONDITIONS
ABSOLUTE MAXIMUM
Drain-Source Voltage
VDS
-3V < VGS < -0.5V
6V
Gate-Source Voltage
VGS
0V < VDS < +6V
-3V
Drain-Source Current
IDS
For VDS < 2V
IDss
Gate Current
IG
Forward or reverse current
7.5mA
RF Input Power
2
PIN
VDS = 3.3V
22dBm
Channel Operating Temperature
TCH
Under any acceptable bias state
175°C
Storage Temperature
TSTG
Non-Operating Storage
-55°C to 150°C
Total Power Dissipation
4
PTOT
See De-Rating Note below
1.1W
Gain Compression
Comp.
Under any bias conditions
5dB
Simultaneous Combination of Limits
3
2 or more Max. Limits
80%
Notes:
1TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause
permanent damage to the device
2Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3Users should avoid exceeding 80% of 2 or more Limits simultaneously
4Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT,
where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power
Total Power Dissipation to be de-rated as follows above 22
°C:
PTOT= 1.1 - (1/Θjc) x TPACK
where TPACK= source tab lead temperature above 22°C & Θjc = 143ºC/W
BIASING GUIDELINES:
Active bias circuits provide good performance stabilization over variations of operating
temperature, but require a larger number of components compared to self-bias or dual-biased.
Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,
otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for
additional information.
Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage
supply for depletion-mode devices.
For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of
RF gain expansion prior to the onset of compression is normal for this operating point. Class A/B
bias of 25-33% offers an optimised solution for NF and OIP3.
DC IV Curves FPD750SOT89
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Drain-Source Voltage (V)
VG=-1.50
VG=-1.25V
VG=-1.00V
VG=-0.75V
VG=-0.50V
VG=-0.25V
VG=0V
Note:
The
recommended
method
for
measuring IDSS, or any particular IDS, is to set
the Drain-Source voltage (VDS) at 1.3V. This
measurement point avoids the onset of
spurious self-oscillation which would normally
distort the current measurement (this effect has
been filtered from the I-V curves presented
above). Setting the VDS > 1.3V will generally
cause errors in the current measurements,
even in stabilized circuits.


Html Pages

1  2  3  4  5  6  7  8  9  10  11 


Datasheet Download



Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
FPD1500DFN_LOW NOISE HIGH LINEARITY PACKAGED PHEMT 1 2 3 4 5 MoreFiltronic Compound Semiconductors
FPD3000SOT89_1LOW NOISE HIGH LINEARITY PACKAGED PHEMT 1 2 3 4 5 MoreFiltronic Compound Semiconductors
FPD2250SOT89_1LOW NOISE HIGH LINEARITY PACKAGED PHEMT 1 2 3 4 5 MoreFiltronic Compound Semiconductors
FPD1500SOT89_1LOW NOISE HIGH LINEARITY PACKAGED PHEMT 1 2 3 4 5 MoreFiltronic Compound Semiconductors
FPD1500DFN_1LOW NOISE HIGH LINEARITY PACKAGED PHEMT 1 2 3 4 5 MoreFiltronic Compound Semiconductors
FPD1050SOT89LOW NOISE HIGH LINEARITY PACKAGED PHEMT 1 2 3 4 5 MoreFiltronic Compound Semiconductors
SPF-2000Low Noise High Linearity pHEMT GaAs FET 0.1 - 12 GHz Operation 1 2 3 SIRENZA MICRODEVICES
FPD6836P70_1LOW NOISE HIGH FREQUENCY PACKAGED PHEMT 1 2 3 4 5 MoreFiltronic Compound Semiconductors
FPM2750QFNLOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE 1 2 3 4 5 MoreFiltronic Compound Semiconductors
AMMC-623218 to 32 GHz GaAs High Linearity Low Noise Amplifier 1 2 3 4 5 MoreAVAGO TECHNOLOGIES LIMITED

Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn