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FPD750SOT343 Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors

Part No. FPD750SOT343
Description  LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Download  11 Pages
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Maker  FILTRONIC [Filtronic Compound Semiconductors]
Homepage  http://www.filtronic.co.uk/
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FPD750SOT343 Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors

 
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LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
1
Datasheet v3.0
FPD750SOT343
FEATURES (1850MHZ):
0.5 dB N.F.min.
20 dBm Output Power (P1dB)
16.5 dB Small-Signal Gain (SSG)
37 dBm Output IP3
RoHS compliant (Directive 2002/95/EC)
GENERAL DESCRIPTION:
The FPD750SOT343 is a packaged depletion
mode pseudomorphic High Electron Mobility
Transistor (pHEMT). It utilizes a 0.25 µm x 750
µm Schottky barrier Gate. The Filtronic
0.25µm process ensures class-leading noise
performance.
The use of a small footprint
plastic package allows for cost effective
system implementation.
PACKAGE:
ROHS:
TYPICAL APPLICATIONS:
802.11a,b,g and WiMax LNAs
PCS/Cellular High Linearity LNAs
Other types of wireless infrastructure systems.
TYPICAL PERFORMANCE1:
RF PARAMETER
SYMBOL
CONDITIONS
0.9GHZ 1.85GHZ 2.6GHZ 3.5GHZ
UNITS
Power at 1dB Gain Compression
OP1dB
VDS = 3.3 V; IDS = 40mA
20
19
20
20.5
dBm
Small Signal Gain
SSG
VDS = 3.3 V; IDS = 40mA
22
16.5
14
11
dB
Power-Added Efficiency
PAE
VDS = 3.3 V; IDS = 40mA
POUT = P1dB
50
45
45
50
%
Maximum Stable Gain (|S21/S12|)
MSG
VDS = 3.3 V; IDS = 40mA
24
20
18
16
dB
Noise Figure
N.F.
VDS = 3.3 V; IDS = 40mA
0.5
0.6
0.7
0.8
dB
Output Third-Order Intercept Point
POUT = 9 dBm per Tone
OIP3
VDS = 3.3V; IDS = 40mA
VDS = 3.3V; IDS = 80mA
32
35
31
37
31
35
32
38
dBm
ELECTRICAL SPECIFICATIONS2:
RF/DC PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Frequency
f
2.0
GHz
Power at 1dB Gain Compression
P1dB
VDS = 3.3 V; IDS = 40mA
17
dBm
Small Signal Gain
SSG
VDS = 3.3 V; IDS = 40mA
16
dB
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
185
230
280
mA
Transconductance
GM
VDS = 1.3 V; VGS = 0 V
200
mS
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 0.75 mA
0.7
1.0
1.3
V
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 0.75 mA
13
16
V
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 0.75 mA
13
18
V
Thermal Resistivity (see Notes)
θJC
VDS > 3V
143
°C/W
Note: 1. Based on measured data taken on applications circuits. 2. All devices are 100% RF and DC tested at
2GHz with ZS = ZL = 50 Ohms 3. TAMBIENT = 22°C


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