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FPD750SOT343 Datasheet(PDF) 3 Page - Filtronic Compound Semiconductors

Part No. FPD750SOT343
Description  LOW NOISE HIGH LINEARITY PACKAGED PHEMT
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Maker  FILTRONIC [Filtronic Compound Semiconductors]
Homepage  http://www.filtronic.co.uk/
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FPD750SOT343 Datasheet(HTML) 3 Page - Filtronic Compound Semiconductors

 
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Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
3
Datasheet v3.0
FPD750SOT343
TYPICAL FREQUENCY REPONSE:
0.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
8.5
9.5
10.5
Frequency (GHz)
MSG & S21 vs Frequency Biased @ 3.3V, 40mA
0
4
8
12
16
20
24
28
MSG
S21
N.F.min vs Frequency Biased @ 3.3V
0.00
0.20
0.40
0.60
0.80
1.00
1.20
Frequency (GHz)
ID = 80mA
ID = 40mA
NOTE: Typical Gain and Noise figure variation against frequency is shown above. The devices were
biased nominally at VDS = 3.3V, IDS = 40mA. The test devices were tuned for minimum noise figure and
maximum gain using tuners at the device input and output ports.
TYPICAL RF PERFORMANCE
@ 1.85 GHZ:
Power Transfer Characteristic
VDS = 3.3VIDS = 80mAat f = 1.85GHz
7.0
9.0
11.0
13.0
15.0
17.0
19.0
21.0
23.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Input Power (dBm)
-1.00
0.00
1.00
2.00
3.00
4.00
5.00
6.00
7.00
Pout (dBm)
Comp Point
Power Transfer Characteristic
VDS = 3.3VIDS = 40mAat f = 1.85GHz
7.0
9.0
11.0
13.0
15.0
17.0
19.0
21.0
23.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
Input Power (dBm)
-1.00
0.00
1.00
2.00
3.00
4.00
5.00
6.00
7.00
Pout (dBm)
Comp Point
NOTE: Typical power transfer curves at two bias conditions are shown above. The data is taken with the
device mounted on evaluation board tuned at 1.85GHz for low noise and gain as shown in the reference
design given on page 6.


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