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FPD1000AS Datasheet(PDF) 3 Page - Filtronic Compound Semiconductors

Part # FPD1000AS
Description  1W PACKAGED POWER PHEMT
Download  11 Pages
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Manufacturer  FILTRONIC [Filtronic Compound Semiconductors]
Direct Link  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FPD1000AS Datasheet(HTML) 3 Page - Filtronic Compound Semiconductors

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Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
3
Datasheet v3.0
FPD1000AS
TYPICAL MEASURED RF PERFORMANCE:
Note: Measurement Conditions TAMBIENT = 22°C unless otherwise stated (VDS=10V, IDS=200mA, f=1800MHz)
Drain Efficiency and PAE
.00%
10.00%
20.00%
30.00%
40.00%
50.00%
60.00%
70.00%
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
Input Power (dBm)
.00%
10.00%
20.00%
30.00%
40.00%
50.00%
60.00%
70.00%
PAE
Eff.
Power Transfer Characteristic
15.00
17.00
19.00
21.00
23.00
25.00
27.00
29.00
31.00
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
Input Power (dBm)
-.50
.00
.50
1.00
1.50
2.00
2.50
3.00
3.50
Pout
Comp Point
IMProductsvs.InputPower
17.00
19.00
21.00
23.00
25.00
27.00
2.00
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
InputPower(dBm)
-55.00
-50.00
-45.00
-40.00
-35.00
-30.00
-25.00
-20.00
-15.00
Pout
Im3,dBc
FPD1000AS I-V Curves
.000
.100
.200
.300
.400
.500
.600
.700
.800
0.00
1.00
2.00
3.00
4.00
5.00
6.00
7.00
8.00
Drain-Source Voltage (V)
VGS = 0V
VGS = -0.25V
VGS = -0.5V
VGS = -0.75V
VGS = -1.0V
VGS = -1.25V
10.0
5.0
3.
0
4.0
-0.2
-0.
4
FPD1000AS IP3 CONTOURS 1800 MHz
Swp Max
222
Swp Min
1
46 dBm
44 dBm
42 dBm
40 dBm
48 dBm
0
1.0
1.0
-
1.0
10.
0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-
2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-
0.6
0.8
0.8
-
0.8
FPD1000AS POWER CONTOURS 1800 MHz
Swp Max
215
Swp Min
1
32 dBm
31 dBm
30 dBm
29 dBm
28 dBm
NOTE:
ntours measured at constant
NOTE:
ours generated with PIN = 11dB
Power co
input power level set to meet Optimum
P1dB at the output match. Optimum
match:
Γ
S = 3 – j2 Ω and ΓL = 25 + j5 Ω
IP3 cont
back-off from P1dB. Local maxima for best
linearity located at:
Γ
L = 40 + j55 Ω and ΓL = 113 + j70 Ω
with
Γ
S = 15 + j12 Ω


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