2 of 12
RF2373
Rev A5 DS060907
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +6.0
V
DC
Bias Voltage, VBIAS
<VCC
VDC
Input RF Level
+15 (see note)
dBm
Current Drain, ICC
32
mA
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
NOTE: Exceeding any one or a combination of the above maximum rating lim-
its may cause permanent damage. Input RF transients to +15dBm will not
harm the device. For sustained operation at inputs >+10dBm, a small drop-
ping resistor of 10
Ω is recommended in series with the VCC.
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
25°C, VCC=3.3V, at typical frequencies unless
otherwise specified
Supply Voltage (VCC)
2.7
3.3
5.0
V
Bias Voltage (VBIAS)
2.7
3.3
5.0
V
RF Frequency Range
800 to 2500
MHz
Power Down Current
10
μAVBIAS=0V
Isolation
23
dB
Current Drain (LNA)
8
14
19
mA
(Driver)
12
18
23
mA
IP2
55
dBm
Cellular Low Noise Amplifier
Frequency
820
880
960
MHz
Gain
19.5
21.5
23.5
dB
ICC=10mA
Noise Figure
1.1
1.3
dB
IIP3
-3
-1
dBm
IP1dB
-13
-11
dBm
Input VSWR
2.0
2.5
Output VSWR
4.0
4.5
GPS Low Noise Amplifier
Frequency
1575
MHz
Gain
17.0
19.0
21.0
dB
ICC=10mA
Noise Figure
1.1
1.3
dB
IIP3
3
5
dBm
IP1dB
-7
-5
dBm
Input VSWR
1.7
2.2
Output VSWR
1.6
2.1
PCS Low Noise Amplifier
Frequency Range
1850
1920
1990
MHz
Gain
16.0
18.0
20.0
dB
ICC=10mA
Noise Figure
1.2
1.4
dB
IIP3
4
6
dBm
IP1dB
-7
-5
dBm
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
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