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Document Number 0266073

1

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FEATURES

Metal-Semiconductor junction with guard ring

TO-220AB

Epitaxial construction

Low forward voltage drop,low switching losses

High surge capability

MECHANICAL DATA

Case:JEDEC TO-220AB,molded plastic

Terminals: Leads solderable per

MIL- STD-750,Method 2026

Polarity: As marked

Weight: 0.08ounce, 2.24 grams

Mounting position: Any

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

SBL

SBL SBL

SBL

SBL

SBL

SBL

SBL

1030CT 1035CT 1040CT 1045CT 1050CT 1060CT 1080CT10100CT

UNITS

Maximum recurrent peak reverse voltage

V

Maximum RMS voltage

V

Maximum DC blocking voltage

V

Maximum average forw ard rectified current

T

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

T

Maximum instantaneous forw ard voltage

@ 5.0A

V

Maximum reverse current

@T

at rated DC blocking voltage @T

Typical thermal resistance

(Note1)

/W

Operating junction temperature range

Storage temperature range

Note: 1. Thermal resistance junction to case.

GALAXY ELECTRICAL

-55--- + 150

30

35

40

45

50

60

80

100

30

35

40

45

50

60

80

100

21

25

28

32

35

42

56

70

mA

0.5

A

-55--- + 150

3.0

0.55

0.70

0.85

175

50

SBL1030CT---SBL10100CT

A

For use in low voltage,high frequency inverters free

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 30 --- 100 V

CURRENT: 10 A

The plastic material carries U/L recognition 94V-0

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MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS