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RU4B Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited

Part # RU4B
Description  HIGH EFFICIENCY ECTIFIERS
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Manufacturer  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

RU4B Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited

  RU4B Datasheet HTML 1Page - Galaxy Semi-Conductor Holdings Limited RU4B Datasheet HTML 2Page - Galaxy Semi-Conductor Holdings Limited  
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FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RU4Z
RU4
RU4A
RU4B
RU4C RU4YX UNITS
Maximum recurrent peak reverse voltage
VRRM
200
400
600
800
1000
100
V
Maximum RMS voltage
VRMS
140
280
420
560
700
70
V
Maximum DC blocking voltage
VDC
200
400
600
800
1000
100
V
Maximum average forw ard rectified current
9.5mm lead length,
@T
A=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load @T
J=125
Maximum instantaneous forw ard voltage
@ I
F=IF(AV)
VF
0.85
V
Maximum reverse current
@T
A=25
50.0
10.0
at rated DC blocking voltage @T
A=100
300.0
Maximum reverse recovery time (Note1)
trr
50
ns
Typical junction capacitance
(Note2)
CJ
pF
Typical thermal resistance
(Note3)
RθJL
/W
Operating junction temperature range
TJ
Storage temperature range
TSTG
2. Measured at 1.0MH
Z and applied rev erse v oltage of 4.0V DC.
GALAXY ELECTRICAL
8
RU4Y(Z) --- RU4YX(Z)
A
The plastic material carries U/L recognition 94V-0
IF(AV)
HIGH EFFICIENCY ECTIFIERS
VOLTAGE RANGE: 100 --- 1000 V
CURRENT: 2.5 -- 4.0 A
DO - 27
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
2.5
4.0
A
IR
IFSM
NOTE: 1. Measured with I
F=0.5A, IR=1A, Irr=0.25A.
3. Thermal resistance f rom junction to ambient.
A
- 55 ----- + 150
- 55 ----- + 150
10.0
100
100
RU4Y
70
100
3.5
3.0
70
50
70.0
50.0
100.0
1.3
1.5
1.6
500.0
300.0
www.galaxycn.com
BLGALAXY ELECTRICAL
BL
Document Number 0262048
1.
4)
4.IF(AV)=2.0A


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