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RU4B Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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RU4B Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 2 page FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Alcohol,Isopropanol and similar solvents MECHANICAL DATA Case:JEDEC DO--27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. RU4Z RU4 RU4A RU4B RU4C RU4YX UNITS Maximum recurrent peak reverse voltage VRRM 200 400 600 800 1000 100 V Maximum RMS voltage VRMS 140 280 420 560 700 70 V Maximum DC blocking voltage VDC 200 400 600 800 1000 100 V Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @ I F=IF(AV) VF 0.85 V Maximum reverse current @T A=25 50.0 10.0 at rated DC blocking voltage @T A=100 300.0 Maximum reverse recovery time (Note1) trr 50 ns Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJL /W Operating junction temperature range TJ Storage temperature range TSTG 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. GALAXY ELECTRICAL 8 RU4Y(Z) --- RU4YX(Z) A The plastic material carries U/L recognition 94V-0 IF(AV) HIGH EFFICIENCY ECTIFIERS VOLTAGE RANGE: 100 --- 1000 V CURRENT: 2.5 -- 4.0 A DO - 27 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 2.5 4.0 A IR IFSM NOTE: 1. Measured with I F=0.5A, IR=1A, Irr=0.25A. 3. Thermal resistance f rom junction to ambient. A - 55 ----- + 150 - 55 ----- + 150 10.0 100 100 RU4Y 70 100 3.5 3.0 70 50 70.0 50.0 100.0 1.3 1.5 1.6 500.0 300.0 www.galaxycn.com BLGALAXY ELECTRICAL BL Document Number 0262048 1. 4) 4.IF(AV)=2.0A |
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