1 of 10
Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
RF OUT
RF IN
GND
GND
12
11
10
9
8
7
4
5
6
1
2
3
GND
GND
RF3223
HIGH LINEARITY/DRIVER AMPLIFIER
The RF3223 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT)
amplifier packaged in a low-cost surface-mount package. This amplifier is ideal for
use in applications requiring high-linearity and low noise figure over the 500MHz to
3GHz frequency range. The RF3223 operates from a single 5V power supply, and is
assembled in an economical 3mmx3mm QFN package.
Features
500MHz to 2000MHz
+44.0dBm Output IP3
+14.0dB Gain at 850MHz
+11.4dBm Input P1dB at
850MHz
3.4dB Noise Figure at 850MHz
Single 5V Power Supply
Applications
Basestation Applications
Cellular and PCS Systems
CDMA, W-CDMA Systems
GSM/EDGE Systems
Final PA for Low-Power Applica-
tions
RF3223
High Linearity/Driver Amplifier
RF3223PCBA-41X
Fully Assembled Evaluation Board
Rev A1 DS050822
RF3223High
Linear-
ity/Driver
Amplifier
RoHS Compliant & Pb-Free Product
Package Style: QFN, 12-Pin, 3 x 3
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
