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Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
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RF3315
BROADBAND HIGH LINEARITY AMPLIFIER
The RF3315 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT) ampli-
fier packaged in a low-cost surface-mount package. This amplifier is ideal for use in
applications requiring high-linearity and low noise figure over the 300MHz to 3GHz
frequency range. The RF3315 operates from a single 5V power supply.
Features
300MHz to 3GHz
+40dBm Output IP3
12.5dB Gain at 2.0GHz
+23dBm P1dB
3.0dB Typical Noise Figure at
2.0GHz
Single 5V Power Supply
Applications
Basestation Applications
Cellular and PCS Systems
WLL, W-CDMA Systems
Final PA for Low-Power Applica-
tions
RF3315
Broadband High Linearity Amplifier
RF3315PCBA-410
Fully Assembled Evaluation Board (2GHz)
RF3315PCBA-411
Fully Assembled Evaluation Board (900MHz)
Rev A10 DS050318
RF3315Broad-
band High Lin-
earity Amplifier
RoHS Compliant & Pb-Free Product
Package Style: SOT89
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