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RF3861PCK-411 Datasheet(PDF) 2 Page - RF Micro Devices

Part # RF3861PCK-411
Description  WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF3861PCK-411 Datasheet(HTML) 2 Page - RF Micro Devices

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RF3861
Rev A0 DS070806
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
0 to +7
V
DC
Input RF Level
+10
dBm
Current Drain, IDD
150
mA
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Note 1: Max continuous RF IN is +10dBm. The max transient RF IN is
+20dBm.
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
High Band
Frequency
3.3
3.5
3.8
GHz
VDD=5V
Current
90
110
mA
Gain
10
dB
At 3.5GHz
Noise Figure
1.1
dB
+25°C, VDD=5V, IDD=90mA, 3500MHz
unless specified
OIP3
37.0
dBm
OP1dB
22.0
dBm
S11
-12
dB
f1=3500MHz, f2=3501MHz
S22
-18
dB
Mid Band
Frequency
1500
2700
MHz
Current
90
110
mA
VDD=5V
Gain
13.5
14.5
16.5
dB
+25°C, VDD=5V, IDD=90mA, 2000MHz
unless specified
Noise Figure
1.0
1.2
dB
OIP3
33.0
35.5
dBm
f1=2000MHz, f2=2001MHz
OP1dB
21.0
22.5
25.0
dBm
S11
-10
dB
S22
-20
dB
Low Band
Frequency
700
1100
MHz
Current
90
110
mA
VDD=5V
Gain
16
dB
+25°C, VDD=5V, IDD=90mA, 850MHz unless
specified
Noise Figure
1.2
dB
OIP3
36.0
dBm
f1=850MHz, f2=851MHz
OP1dB
22.5
dBm
S11
-14
dB
S22
-18
dB
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.


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