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FPD1500DFN Datasheet(PDF) 5 Page - Filtronic Compound Semiconductors

Part No. FPD1500DFN
Description  LOW NOISE HIGH LINEARITY PACKAGED PHEMT
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Maker  FILTRONIC [Filtronic Compound Semiconductors]
Homepage  http://www.filtronic.co.uk/
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FPD1500DFN Datasheet(HTML) 5 Page - Filtronic Compound Semiconductors

 
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Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
5
Datasheet v3.0
FPD1500DFN
TYPICAL I-V CHARACTERISTICS:
DC IV Curves FPD750SOT89
Note: The recommended method for measuring IDSS, or any particular IDS, is to set the Drain-Source voltage (VDS)
at 1.3V. This measurement point avoids the onset of spurious self-oscillation which would normally distort the
current measurement (this effect has been filtered from the I-V curves presented above). Setting the VDS > 1.3V
will generally cause errors in the current measurements, even in stabilized circuits.
Recommendation: Traditionally a device’s IDSS rating (IDS at VGS = 0V) was used as a predictor of RF power, and
for MESFETs there is a correlation between IDSS and P1dB (power at 1dB gain compression). For pHEMTs it can
be shown that there is no meaningful statistical correlation between IDSS and P1dB; specifically a linear regression
analysis shows r
2 < 0.7, and the regression fails the F-statistic test. I
DSS is sometimes useful as a guide to circuit
tuning, since the S22 does vary with the quiescent operating point IDS.
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Drain-Source Voltage (V)
VG=-1.50
VG=-1.25V
VG=-1.00V
VG=-0.75V
VG=-0.50V
VG=-0.25V
VG=0V
DC IV Curves FPD1500DFN


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