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FPD1500SOT89 Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors

Part No. FPD1500SOT89
Description  LOW NOISE HIGH LINEARITY PACKAGED PHEMT
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Maker  FILTRONIC [Filtronic Compound Semiconductors]
Homepage  http://www.filtronic.co.uk/
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FPD1500SOT89 Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors

 
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LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
1
Datasheet v3.0
FPD1500SOT89
FEATURES (1850MHZ):
27.5 dBm Output Power (P1dB)
17 dB Small-Signal Gain (SSG)
1.2 dB Noise Figure
42 dBm Output IP3
50% Power-Added Efficiency
FPD1500SOT89E - RoHS compliant
GENERAL DESCRIPTION:
The FPD1500SOT89 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 µm x 1500 µm Schottky barrier
gate, defined by high-resolution stepper-based
photolithography. The double recessed gate
structure minimizes parasitics to optimize
performance, with an epitaxial structure
designed for improved linearity over a range of
bias conditions and i/p power levels.
PACKAGE:
RoHS
TYPICAL APPLICATIONS:
Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
High intercept-point LNAs
WLL and WLAN systems, and other types
of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Power at 1dB Gain Compression
P1dB
VDS = 5 V; IDS = 50% IDSS
26.0
27.5
dBm
Small-Signal Gain
SSG
VDS = 5 V; IDS = 50% IDSS
15.5
17
dB
Power-Added Efficiency
PAE
VDS = 5 V; IDS = 50% IDSS;
POUT = P1dB
50
%
Noise Figure
NF
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 25% IDSS
1.0
1.2
dB
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
IP3
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
Matched for best IP3
38
40
42
dBm
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
375
465
550
mA
Maximum Drain-Source Current
IMAX
VDS = 1.3 V; VGS
≅ +1 V
750
mA
Transconductance
GM
VDS = 1.3 V; VGS = 0 V
400
mS
Gate-Source Leakage Current
IGSO
VGS = -5 V
1
15
µA
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 1.5 mA
0.7
1.0
1.3
V
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 1.5 mA
12
16
V
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 1.5 mA
12
16
V
Thermal Resistance
R
θJC
60
°C/W
Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)


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