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FPD2250SOT89 Datasheet(PDF) 3 Page - Filtronic Compound Semiconductors

Part No. FPD2250SOT89
Description  LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Download  6 Pages
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Maker  FILTRONIC [Filtronic Compound Semiconductors]
Homepage  http://www.filtronic.co.uk/
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FPD2250SOT89 Datasheet(HTML) 3 Page - Filtronic Compound Semiconductors

   
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Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
3
Datasheet v3.0
FPD2250SOT89
TYPICAL TUNED RF PERFORMANCE:
Drain Efficiency and PAE
VDS = 5V IDS = 50% IDSS at f = 1.85 GHz
5.0%
15.0%
25.0%
35.0%
45.0%
55.0%
65.0%
9
1113151719
Input Power (dBm)
5.0%
15.0%
25.0%
35.0%
45.0%
55.0%
65.0%
PAE
Eff.
Power Transfer Characteristric
VDS = 5V IDS = 50% IDSS at f = 1.85 GHz
23.0
24.0
25.0
26.0
27.0
28.0
29.0
30.0
9
11131517
19
Input Power (dBm)
-0.75
-0.25
0.25
0.75
1.25
1.75
2.25
2.75
3.25
3.75
Pout (dBm)
Comp Point
NOTE: Typical power and efficiency is shown above. The devices were biased nominally at VDS = 5V, IDS
= 50% of IDSS, at a test frequency of 1.85 GHz. The test devices were tuned (input and output tuning) for
maximum output power at 1dB gain compression.
123
4567
8
Frequency (GHz)
FPD2250SOT89 5V / 50%IDSS
0
5
10
15
20
25
30
MSG
S21
Typical Intermodulation Performance
VDS =5V IDS = 50% IDSS at f = 1.85 GHz
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
-2.5
-1.5
-0.5
0.6
1.6
2.6
3.6
4.6
Input Power (dBm)
-60
-58
-56
-54
-52
-50
-48
-46
-44
Pout (dBm)
3rds (dBc)
Note:
pHEMT devices have enhanced
intermodulation performance. This yields OIP3
values of about P1dB + 14dBm. This IMD
enhancement is affected by the quiescent bias
and the matching applied to the device.
TYPICAL I-V CHARACTERISTICS:
DC IV Curves FPD1500SOT89
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.0
0.5
1.0
1.5
2.02.5
3.03.5
4.04.5
5.05.5
6.0
Drain-Source Voltage (V)
VG=-1.5V
VG-1.25V
VG=-1.00V
VG=-0.75V
VG=-0.5V
VG=-0.25V
VG=0V
Note: The recommended method for measuring
IDSS, or any particular IDS, is to set the Drain-Source
voltage (VDS) at 1.3V. This measurement point
avoids the onset of spurious self-oscillation which
would normally distort the current measurement
(this effect has been filtered from the I-V curves
presented above).
Setting the VDS > 1.3V will
generally
cause
errors
in
the
current
measurements, even in stabilized circuits.


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