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FPD3000SOT89 Datasheet(PDF) 3 Page - Filtronic Compound Semiconductors

Part No. FPD3000SOT89
Description  LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Download  7 Pages
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Maker  FILTRONIC [Filtronic Compound Semiconductors]
Homepage  http://www.filtronic.co.uk/
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FPD3000SOT89 Datasheet(HTML) 3 Page - Filtronic Compound Semiconductors

   
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Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
3
FPD3000SOT89
Datasheet v3.0
TYPICAL TUNED RF PERFORMANCE:
Drain Efficiency and PAE
0%
5%
10%
15%
20%
25%
30%
35%
40%
45%
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
Input Power (dBm)
0%
5%
10%
15%
20%
25%
30%
35%
40%
45%
PAE
Eff.
Power Transfer Characteristic
23.0
24.0
25.0
26.0
27.0
28.0
29.0
30.0
31.0
32.0
11.0
13.0
15.0
17.0
19.0
21.0
23.0
Input Power (dBm)
-0.75
-0.25
0.25
0.75
1.25
1.75
2.25
2.75
3.25
Pout (dBm)
Comp Point
NOTE: Typical power and efficiency is shown above. The devices were biased nominally at VDS = 5V, IDS
= 50% of IDSS, at a test frequency of 1.85 GHz. The test devices were tuned (input and output tuning) for
maximum output power at 1dB gain compression.
Typical Intermodulation performance
VDS = 5V, IDS = 50% IDSS at f = 1.85GHz
11
13
15
17
19
21
0.7
1.7
2.8
3.8
4.7
5.7
6.8
7.8
8.8
9.8
Inout Power (dBm)
-60.00
-58.00
-56.00
-54.00
-52.00
-50.00
-48.00
-46.00
-44.00
-42.00
-40.00
Pout (dBm)
3rds (dBc)
Note: The recommended method for measuring
IDSS, or any particular IDS, is to set the Drain-Source
voltage (VDS) at 1.3V. This measurement point
avoids the onset of spurious self-oscillation which
would normally distort the current measurement
(this effect has been filtered from the I-V curves
presented above).
Setting the VDS > 1.3V will
generally
cause
errors
in
the
current
measurements, even in stabilized circuits.
Note: pHEMT devices have enhanced
intermodulation performance. This yields OIP3
values of about P1dB + 14 dB. This IMD
enhancement is affected by the quiescent bias
and the matching applied to the device.
TYPICAL I-V CHARACTERISTICS:
0.51.5
2.53.5
4.55.5
6.57.5
8
equency (GHz)
FPD3000SOT89 5V / 50%IDSS
Fr
0
5
10
15
20
25
30
35
MSG
S21
DC IV Curves FPD3000SOT89
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Drain-Source Voltage (V)
VG=-1.50V
VG=-1.25V
VG=-1.00V
VG=-0.75V
VG=-0.50V
VG=-0.25V
VG=0V


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