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FPD6836P70 Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors |
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FPD6836P70 Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors |
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LOW NOISE HIGH FREQUENCY PACKAGED PHEMT Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com 1 Datasheet v3.0 FPD6836P70 ` FEATURES: • 22 dBm Output Power (P1dB) • 15 dB Power Gain (G1dB) at 5.8 GHz • 0.8 dB Noise Figure at 5.8 GHz • 32 dBm Output IP3 at 5.8 GHz • 45% Power-Added Efficiency at 5.8 GHz • Useable Gain to 18 GHz GENERAL DESCRIPTION: The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low noise, high frequency applications. PACKAGE: YPICAL APPLICATIONS: power stages GHz) GHz) ELECTRICAL SPECIFICATIONS: Note: ; RF specific measured at f = 5.8 GHz using CW signal (excep noted T • Gain blocks and medium • WiMax (2-11GHz) • WLAN 802.11a (5.8 • Point-to-Point Radio (to 18 PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Power ssion VD at 1dB Gain Compre P1dB S = 5 V; IDS = 55mA 22 dBm Small Signal Gain SSG VDS = 5 V; IDS = 55mA 14 16 dB Po cy wer-Added Efficien PAE VDS = 5 V; IDS = 55mA POUT = P1dB 45 % Maximum Stabl ain (S21/S12) MSG VDS mA 15 e G f = 12 GHz f = 18 GHz = 5 V; IDS = 55 12 Noise Figure NF VDS = 5 V; IDS = 55mA, dB 0.8 Output Th cept Point ird-Order Inter IP3 VDS = 5V; IDS = 55mA POUT = 10 dBm SCL 32 dBm Saturated Drain-Source Current IDSS VDS = 1.3 V; VGS = 0 V 90 105 135 mA Maximum Drain-Source Current IMAX VDS = 1.3 V; VGS ≅ +1 V 215 mA Transconductance GM VDS = 1.3 V; VGS = 0 V 140 mS Gate rrent 1 -Source Leakage Cu IGSO VGS = -5 V 1 0 µA Pinch-Off Voltage |VP| VDS = 0.2 mA 0.7 1.3 V; IDS = 1.0 1.3 V Gate-So age |VBDGS| urce Breakdown Volt IGS = 0.36mA 12 14 V Gate-Drain Breakdown Voltage |VBDGD| IGD = 0.36 mA 14.5 16 V Thermal Resistance R θJC 275 °C/W TAMBIENT = 22°C ation t as ) |
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