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FPD6836P70 Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors

Part No. FPD6836P70
Description  LOW NOISE HIGH FREQUENCY PACKAGED PHEMT
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Maker  FILTRONIC [Filtronic Compound Semiconductors]
Homepage  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FPD6836P70 Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors

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LOW NOISE HIGH FREQUENCY PACKAGED PHEMT
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
1
Datasheet v3.0
FPD6836P70
`
FEATURES:
22 dBm Output Power (P1dB)
15 dB Power Gain (G1dB) at 5.8 GHz
0.8 dB Noise Figure at 5.8 GHz
32 dBm Output IP3 at 5.8 GHz
45% Power-Added Efficiency at 5.8 GHz
Useable Gain to 18 GHz
GENERAL DESCRIPTION:
The FPD6836P70 is a low parasitic, surface
mountable
packaged
depletion
mode
pseudomorphic
High
Electron
Mobility
Transistor (pHEMT) optimised for low noise,
high frequency applications.
PACKAGE:
YPICAL
APPLICATIONS:
power stages
GHz)
GHz)
ELECTRICAL SPECIFICATIONS:
Note:
; RF specific
measured at f = 5.8 GHz using CW signal (excep
noted
T
Gain blocks and medium
WiMax (2-11GHz)
WLAN 802.11a (5.8
Point-to-Point Radio (to 18
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Power
ssion
VD
at 1dB Gain Compre
P1dB
S = 5 V; IDS = 55mA
22
dBm
Small Signal Gain
SSG
VDS = 5 V; IDS = 55mA
14
16
dB
Po
cy
wer-Added Efficien
PAE
VDS = 5 V; IDS = 55mA
POUT = P1dB
45
%
Maximum Stabl
ain (S21/S12)
MSG
VDS
mA
15
e G
f = 12 GHz
f = 18 GHz
= 5 V; IDS = 55
12
Noise Figure
NF
VDS = 5 V; IDS = 55mA,
dB
0.8
Output Th
cept Point
ird-Order Inter
IP3
VDS = 5V; IDS = 55mA
POUT = 10 dBm SCL
32
dBm
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
90
105
135
mA
Maximum Drain-Source Current
IMAX
VDS = 1.3 V; VGS
≅ +1 V
215
mA
Transconductance
GM
VDS = 1.3 V; VGS = 0 V
140
mS
Gate
rrent
1
-Source Leakage Cu
IGSO
VGS = -5 V
1
0
µA
Pinch-Off Voltage
|VP|
VDS =
0.2 mA
0.7
1.3 V; IDS =
1.0
1.3
V
Gate-So
age
|VBDGS|
urce Breakdown Volt
IGS = 0.36mA
12
14
V
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 0.36 mA
14.5
16
V
Thermal Resistance
R
θJC
275
°C/W
TAMBIENT = 22°C
ation
t as
)


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