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FPD6836P70 Datasheet(PDF) 3 Page - Filtronic Compound Semiconductors

Part No. FPD6836P70
Description  LOW NOISE HIGH FREQUENCY PACKAGED PHEMT
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Maker  FILTRONIC [Filtronic Compound Semiconductors]
Homepage  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FPD6836P70 Datasheet(HTML) 3 Page - Filtronic Compound Semiconductors

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Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
3
Datasheet v3.0
FPD6836P70
TYPICAL FREQUENCY RESPONSE
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
Frequency (GHz)
FPD6836P70 Biased @ VD = 5V ID = 55mA
0
5
10
15
20
25
30
MSG
S21
123
456
78
9
10
11
12 13
14
15
16 17 18
Frequency (GHz)
FPD6836P70 Bias VD= 5V, ID=50mA
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
NOTE: Tuned Noise figure variation against frequency is shown above.
The devices were biased
nominally at VDS = 5V, IDS = 50mA. The test devices were tuned for minimum noise figure using tuners at
the device input and output ports.
TYPICAL RF PERFORMANCE
Drain Efficiency and PAE
0.0%
10.0%
20.0%
30.0%
40.0%
50.0%
60.0%
70.0%
-3
-1
135
79
11
13
Input Power (dBm)
0.0%
10.0%
20.0%
30.0%
40.0%
50.0%
60.0%
70.0%
PAE
Eff.
Power Transfer Characteristics
VDS = 5V, IDS = 55mA at f = 5.8GHz
9.0
11.0
13.0
15.0
17.0
19.0
21.0
23.0
-3
-1
13579
11
13
Input Power (dBm)
-0.50
0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
Pout (dBm)
Comp Point
Typical Intermodulation Performance
VDS = 5V, IDS = 55mA at f = 5.8GHz
2
4
6
8
10
12
-10.3
-9.3
-8.3
-7.4
-6.3
-5.3
-4.4
-3.4
-2.4
Inpur Power (dBm)
-58.00
-53.00
-48.00
-43.00
-38.00
Pout (dBm)
3rds (dBc)
NOTE: Typical Power, Efficiency and
Intermodulation is shown above. The
devices were biased nominally at VDS
= 5V, IDS = 55mA at a test frequency of
5.8 GHz. The test devices were Tuned
using slide tuners at the input and the
output ports of the device.


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